KSH31C

更新时间： 2024-09-12 22:32:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体放大器晶体管
页数	文件大小	规格书
6页	57K
描述
General Purpose Amplifier Low Speed Switching Applications

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

KSH31C 数据手册

KSH31/31C

General Purpose Amplifier

Low Speed Switching Applications

•

Lead Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, “- I” Suffix)

Electrically Similar to Popular TIP31 and TIP31C

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

CBO

: KSH31

: KSH31C

100

Collector-Emitter Voltage

CEO

: KSH31

: KSH31C

100

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

EBO

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.56

150

Junction Temperature

Storage Temperature

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

(sus)

* Collector-Emitter Sustaining Voltage

CEO

CES

EBO

: KSH31

: KSH31C

= 30mA, I = 0

100

Collector Cut-off Current

: KSH31

= 40V, I = 0

µA

: KSH31C

= 60V, I = 0

Collector Cut-off Current

: KSH31

= 40V, V = 0

µA

: KSH31C

= 100V, V = 0

Emitter Cut-off Current

* DC Current Gain

= 5V, I = 0

= 4V, I = 1A

= 4V, I = 3A

1.2

1.8

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter On Voltage

= 3A, I = 375mA

(on)

= 4A, I = 3A

Current Gain Bandwidth Product

= 10V, I = 500mA

MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. B3, October 2002

12 3 4 5 6

中文翻译

下载PDF

KSH31C 替代型号

型号	品牌	替代类型	描述	数据表
MJD31CTF	ONSEMI	功能相似	3.0 A, 100 V NPN Bipolar Power Transistor
KSH31CTF	ONSEMI	功能相似	NPN外延硅晶体管

与KSH31C相关器件

型号	品牌	获取价格	描述	数据表
KSH31CI	SAMSUNG	获取价格	3A, 100V, NPN, Si, POWER TRANSISTOR
KSH31C-I	SAMSUNG	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSH31CTF	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
KSH31CTF	ONSEMI	获取价格	NPN外延硅晶体管
KSH31CTM	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
KSH31I	FAIRCHILD	获取价格	暂无描述
KSH31-I	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
KSH31TF	ROCHESTER	获取价格	3A, 40V, NPN, Si, POWER TRANSISTOR, TO-252, DPAK-3
KSH31TF	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/
KSH32	FAIRCHILD	获取价格	General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applica