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KSH30C PDF预览

KSH30C

更新时间: 2024-11-25 21:16:55
品牌 Logo 应用领域
三星 - SAMSUNG 放大器晶体管
页数 文件大小 规格书
2页 92K
描述
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

KSH30C 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.68最大集电极电流 (IC):3 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

KSH30C 数据手册

 浏览型号KSH30C的Datasheet PDF文件第2页 

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