生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.68 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 3 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH30CI | FAIRCHILD |
获取价格 |
1 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251, IPAK-3 | |
KSH30C-I | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH30C-I | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
KSH30CITU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic | |
KSH30CTF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
KSH30-I | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
KSH30TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
KSH30-TF | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 | |
KSH31 | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications | |
KSH31C | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications |