生命周期: | Obsolete | 零件包装代码: | TO-251 |
包装说明: | IPAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.68 |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSH30CTF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic | |
KSH30-I | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
KSH30TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ | |
KSH30-TF | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 | |
KSH31 | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications | |
KSH31C | FAIRCHILD |
获取价格 |
General Purpose Amplifier Low Speed Switching Applications | |
KSH31CI | SAMSUNG |
获取价格 |
3A, 100V, NPN, Si, POWER TRANSISTOR | |
KSH31C-I | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSH31CTF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic | |
KSH31CTF | ONSEMI |
获取价格 |
NPN外延硅晶体管 |