是否无铅: | 含铅 | 生命周期: | End Of Life |
包装说明: | PLASTIC, CASE 369A, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.08 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 13 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 65 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MJD200T4G | ONSEMI |
类似代替 |
Complementary Plastic Power Transistors | |
MJD200RLG | ONSEMI |
类似代替 |
Complementary Plastic Power Transistors | |
MJD200G | ONSEMI |
类似代替 |
Complementary Plastic Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD200T4G | ONSEMI |
获取价格 |
Complementary Plastic Power Transistors | |
MJD200TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
MJD210 | UTC |
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PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS | |
MJD210 | FAIRCHILD |
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D-PAK for Surface Mount Applications | |
MJD210 | ONSEMI |
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Complementary Plastic Power Transistors | |
MJD210 | MOTOROLA |
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SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS | |
MJD210_10 | UTC |
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PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS | |
MJD210_15 | UTC |
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PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS | |
MJD210-1 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS | |
MJD210G | ONSEMI |
获取价格 |
Complementary Plastic Power Transistors |