MJD210

更新时间： 2024-09-12 22:29:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	49K
描述
D-PAK for Surface Mount Applications

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替代型号

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MJD210 数据手册

MJD210

D-PAK for Surface Mount Applications

•

High DC Current Gain

Low Collector Emitter Saturation Voltage

Lead Formed for Surface Mount Applications (No Suffix)

Straight Lead (I-PAK, “ - I “ Suffix)

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

- 40

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

CBO

CEO

EBO

- 25

- 8

- 5

Collector Peck Current (Pulse)

Base Current

- 10

- 1

Collector Dissipation (T = 25°C)

12.5

1.4

°C

Collector Dissipation (T = 25°C)

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Max.

Units

(sus)

= - 10mA, I = 0

-25

CEO

CBO

EBO

= - 40V, I = 0

-100

= - 8V, I = 0

EBO

* DC Current Gain

= - 1V, I = - 500mA

= - 1V, I = - 2A

180

= - 2V, I = - 5A

(sat)

* Collector-Emitter Saturation Voltage

= - 500mA, I = - 50mA

-0.3

-0.75

-1.8

= - 2A, I = - 200mA

= - 5A, I = - 1A

(sat)

(on)

* Base-Emitter Saturation Voltage

* Base-Emitter ON Voltage

Current Gain Bandwidth Product

Output Capacitance

= - 5A, I = - 1A

-2.5

-1.6

= - 1V, I = - 2A

= - 10V, I = - 100mA

MHz

= - 10V, I = 0, f = 0.1MHz

120

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A2, June 2001

12 3 4 5

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MJD210 替代型号

型号	品牌	替代类型	描述	数据表
MJD210T4G	ONSEMI	功能相似	Complementary Plastic Power Transistors
MJD210RLG	ONSEMI	功能相似	Complementary Plastic Power Transistors
MJD210G	ONSEMI	功能相似	Complementary Plastic Power Transistors

与MJD210相关器件

型号	品牌	获取价格	描述	数据表
MJD210_10	UTC	获取价格	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210_15	UTC	获取价格	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS
MJD210G	ONSEMI	获取价格	Complementary Plastic Power Transistors
MJD210G-TM3-T	UTC	获取价格	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210G-TN3-R	UTC	获取价格	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210G-TN3-T	UTC	获取价格	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
MJD210I	FAIRCHILD	获取价格	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
MJD210-I	FAIRCHILD	获取价格	D-PAK for Surface Mount Applications
MJD210L-TM3-T	UTC	获取价格	PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS