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MJD18002D2T4

更新时间： 2024-09-16 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
11页 129K
描述
POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

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MJD18002D2T4 数据手册

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MJD18002D2  
Bipolar NPN Transistor  
High Speed, High Gain Bipolar NPN  
Power Transistor with Integrated  
Collector−Emitter Diode and Built−In  
Efficient Antisaturation Network  
The MJD18002D2 is a state−of−the−art high speed, high gain  
bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot  
minimum spread ( 150 ns on storage time) make it ideally suitable for  
light ballast applications. Therefore, there is no longer a need to  
http://onsemi.com  
POWER TRANSISTOR  
2 AMPERES  
1000 VOLTS, 50 WATTS  
guarantee an h window.  
FE  
Features  
• Low Base Drive Requirement  
• High Peak DC Current Gain (55 Typical) @ I = 100 mA  
C
• Extremely Low Storage Time Min/Max Guarantees Due to the  
H2BIP Structure which Minimizes the Spread  
• Integrated Collector−Emitter Free Wheeling Diode  
• Fully Characterized and Guaranteed Dynamic V  
CEsat  
• Characteristics Make It Suitable for PFC Application  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
4
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
2
1
3
• Six Sigma® Process Providing Tight and Reproductible Parameter  
Spreads  
DPAK  
CASE 369C  
STYLE 1  
• Pb−Free Package is Available  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
450  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
V
CEO  
CBO  
MARKING DIAGRAM  
1000  
1000  
11  
V
V
CES  
EBO  
YWW  
180  
Collector Current − Continuous  
Collector Current − Peak (Note 1)  
I
2.0  
5.0  
C
I
CM  
02D2G  
Base Current  
Base Current  
− Continuous  
I
1.0  
2.0  
Adc  
B
I
BM  
− Peak (Note 1)  
THERMAL CHARACTERISTICS  
Characteristic  
Y
WW  
= Year  
= Work Week  
Symbol  
Value  
Unit  
18002D2 = Device Code  
Total Device Dissipation @ T = 25°C  
P
50  
0.4  
W
W/°C  
C
D
G
= Pb−Free Package  
Derate above 25°C  
Operating and Storage Temperature Range T , T  
−65 to +150  
5.0  
°C  
°C/W  
°C/W  
°C  
J
stg  
ORDERING INFORMATION  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
L
†
Device  
Package  
Shipping  
R
71.4  
q
MJD18002D2T4  
DPAK  
3000/Tape & Reel  
3000/Tape & Reel  
Maximum Lead Temperature for Soldering  
T
260  
Purposes: 1/8″ from Case for 5 seconds  
MJD18002D2T4G  
DPAK  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 2  
MJD18002D2/D  
 
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