生命周期: | Transferred | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.75 |
风险等级: | 5.35 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 基于收集器的最大容量: | 80 pF |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
功耗环境最大值: | 12.5 W | 最大功率耗散 (Abs): | 12 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 65 MHz | 最大关闭时间(toff): | 190 ns |
VCEsat-Max: | 1.8 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD200G | ONSEMI |
获取价格 |
Complementary Plastic Power Transistors | |
MJD200I | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
MJD200-I | FAIRCHILD |
获取价格 |
暂无描述 | |
MJD200RL | ONSEMI |
获取价格 |
Complementary Plastic Power Transistors | |
MJD200RLG | ONSEMI |
获取价格 |
Complementary Plastic Power Transistors | |
MJD200T4 | ONSEMI |
获取价格 |
Complementary Plastic Power Transistors | |
MJD200T4 | MOTOROLA |
获取价格 |
SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS | |
MJD200T4G | ONSEMI |
获取价格 |
Complementary Plastic Power Transistors | |
MJD200TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
MJD210 | UTC |
获取价格 |
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |