Datasheet > NDD02N40-1G

NDD02N40-1G

更新时间： 2024-10-27 01:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	108K
描述
N-Channel Power MOSFET

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NDD02N40-1G 数据手册

NDD02N40, NDT02N40

N-Channel Power MOSFET

400 V, 5.5 W

Features

• 100% Avalanche Tested

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

MAX

DS(ON)

(BR)DSS

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

400 V

5.5 W @ 10 V

N−Channel MOSFET

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain Current R

Symbol

NDD

NDT

Unit

DSS

400

D (2)

1.7

1.1

0.4

0.25

2.0

Steady State, T = 25°C (Note 1)

Continuous Drain Current R

G (1)

Steady State, T = 100°C (Note 1)

Power Dissipation – R

S (3)

Steady State, T = 25°C

MARKING

DIAGRAMS

Pulsed Drain Current

6.9

1.7

1.6

0.4

Continuous Source Current (Body

Diode)

Drain

Single Pulse Drain−to−Source

EAS

120

260

°C

DPAK

CASE 369C

(Surface Mount)

STYLE 2

Avalanche Energy, I = 1 A

Maximum Temperature for Soldering

Leads

Operating Junction and Storage

Temperature

T , T

−55 to +150

STG

Drain

Gate

Source

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Limited by maximum junction temperature

Drain

IPAK

CASE 369D

2. I = 1.7 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

(Straight Lead)

STYLE 2

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

°C/W

= Year

Junction−to−Case (Drain)

NDD02N40

3.2

2N40

= Work Week

= Device Code

Junction−to−Ambient Steady State

Gate Drain Source

NDD02N40 (Note 4)

NDD02N40−1 (Note 3)

NDT02N40 (Note 4)

NDT02N40 (Note 5)

= Pb−Free Package

Drain

SOT−223

CASE 318E

STYLE 3

151

AYW

3. Insertion mounted

2N40G

4. Surface mounted on FR4 board using 1″ sq. pad size

2N40

= Assembly Location

= Year

= Work Week

= Specific Device Code

= Pb−Free Package

(Cu area = 1.127″ sq. [2 oz] including traces)

5. Surface−mounted on FR4 board using minimum recommended pad size

(Cu area = 0.026” sq. [2 oz]).

Gate Drain Source

(*Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Publication Order Number:

July, 2014 − Rev. 4

NDD02N40/D

12 3 4 5 6 7...9

中文翻译

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NDD02N40-1G 替代型号

型号	品牌	替代类型	描述	数据表
NDD02N40T4G	ONSEMI	完全替代	N-Channel Power MOSFET

与NDD02N40-1G相关器件

型号	品牌	获取价格	描述	数据表
NDD02N40T4G	ONSEMI	获取价格	N-Channel Power MOSFET
NDD02N60Z-1G	ONSEMI	获取价格	N-Channel Power MOSFET 600 V, 4.0
NDD02N60ZT4G	ONSEMI	获取价格	N-Channel Power MOSFET 600 V, 4.0
NDD03N40Z-1G	ONSEMI	获取价格	Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAK
NDD03N40ZT4G	ONSEMI	获取价格	Power MOSFET 400V 2.1A 3.4 OHM Single N-Channel DPAK
NDD03N50Z	ONSEMI	获取价格	N-Channel Power MOSFET 500 V, 3.3
NDD03N50Z-1G	ONSEMI	获取价格	N-Channel Power MOSFET 500 V, 3.3
NDD03N50ZT4G	ONSEMI	获取价格	N-Channel Power MOSFET 500 V, 3.3
NDD03N60Z	ONSEMI	获取价格	N-Channel Power MOSFET 600 V, 3.3
NDD03N60Z-1G	ONSEMI	获取价格	N-Channel Power MOSFET 600 V, 3.3

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