5秒后页面跳转
NDD04N60Z PDF预览

NDD04N60Z

更新时间: 2024-11-02 05:52:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 148K
描述
N-Channel Power MOSFET 1.8 , 600 Volts

NDD04N60Z 数据手册

 浏览型号NDD04N60Z的Datasheet PDF文件第2页浏览型号NDD04N60Z的Datasheet PDF文件第3页浏览型号NDD04N60Z的Datasheet PDF文件第4页浏览型号NDD04N60Z的Datasheet PDF文件第5页浏览型号NDD04N60Z的Datasheet PDF文件第6页浏览型号NDD04N60Z的Datasheet PDF文件第7页 
NDF04N60Z, NDP04N60Z,  
NDD04N60Z  
N-Channel Power MOSFET  
1.8 W, 600 Volts  
Features  
http://onsemi.com  
Low ON Resistance  
Low Gate Charge  
100% Avalanche Tested  
These Devices are PbFree and are RoHS Compliant  
V
R
(TYP) @ 2 A  
DS(ON)  
DSS  
600 V  
1.8 Ω  
Applications  
Adapter (Notebook, Printer, Gaming)  
LCD Panel Power  
Lighting Ballasts  
4
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
4
Rating  
Symbol  
NDF  
600 (Note 1)  
4.0 (Note 2)  
NDD/NDP Unit  
DraintoSource Voltage  
Continuous Drain Current  
Continuous Drain Current  
V
DSS  
V
A
A
2
1
1
1
1
2
2
3
2
I
I
D
3
3
3
DPAK  
TO220FP TO220AB  
CASE 221D CASE 221A CASE 369D  
STYLE 1 STYLE 5  
STYLE 2  
IPAK  
2.7 (Note 2)  
D
CASE 369AA  
STYLE 2  
T = 100°C  
A
Pulsed Drain Current, V @ 10V  
I
14 (Note 2)  
A
W
V
GS  
DM  
Power Dissipation (Note 1)  
GatetoSource Voltage  
P
28  
95  
D
MARKING DIAGRAMS  
V
30  
51  
GS  
4
Drain  
Single Pulse Avalanche Energy,  
E
mJ  
AS  
L = 6.4 mH, I = 4.0 A  
D
ESD (HBM) (JESD 22114B)  
V
2500  
V
V
esd  
RMS Isolation Voltage (t = 0.3  
V
ISO  
4500  
NDF04N60ZG  
sec., R.H. 30%, T = 25°C)  
or  
A
(Figure 13)  
NDP04N60ZG  
AYWW  
Peak Diode Recovery  
dv/dt  
4.5 (Note 3)  
4.0  
V/ns  
A
Gate  
Source  
1
2
3
Continuous Source Current  
(Body Diode)  
I
S
4
Gate Drain Source  
Drain  
Maximum Temperature for  
Soldering Leads, 0.063″  
(1.6 mm) from Case for 10 s  
Package Body for 10 s  
T
300  
260  
°C  
L
T
PKG  
Drain  
2
Operating Junction and  
Storage Temperature Range  
T , T  
55 to 150  
°C  
J
stg  
Drain  
1
3
Gate Source  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
Y
WW  
G
= Location Code  
= Year  
= Work Week  
= PbFree Package  
1. Surface mounted on FR4 board using 1sq. pad size, 1 oz cu  
2. Limited by maximum junction temperature  
3. I = 4.0 A, di/dt 100 A/ms, V BV  
, T = +150°C  
J
SD  
DD  
DSS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 Rev. 0  
NDF04N60Z/D  
 

与NDD04N60Z相关器件

型号 品牌 获取价格 描述 数据表
NDD04N60Z-1G ONSEMI

获取价格

N-Channel Power MOSFET 1.8 , 600 Volts
NDD04N60ZG ONSEMI

获取价格

N-Channel Power MOSFET 1.8 , 600 Volts
NDD04N60ZT4G ONSEMI

获取价格

N-Channel Power MOSFET 600 V, 2.0 Ohm
NDD04N62Z ONSEMI

获取价格

N-Channel Power MOSFET 620 V, 1.8 
NDD04N62Z-1G ONSEMI

获取价格

N-Channel Power MOSFET 620 V, 1.8 
NDD04N62ZT4G ONSEMI

获取价格

N-Channel Power MOSFET 620 V, 1.8 
NDD05N50Z ONSEMI

获取价格

N-Channel Power MOSFET 500 V, 1.25 Ω
NDD05N50Z-1G ONSEMI

获取价格

N-Channel Power MOSFET 500 V, 1.25 Ω
NDD05N50ZT4G ONSEMI

获取价格

N-Channel Power MOSFET 500 V, 1.25 Ω
NDD406A NSC

获取价格

TRANSISTOR 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose