Datasheet > NDD03N80Z.1G

NDD03N80Z.1G

更新时间： 2024-11-03 01:16:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	131K
描述
N.Channel Power MOSFET

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中文翻译

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数据手册

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NDD03N80Z.1G 数据手册

NDD03N80Z, NDF03N80Z

N‐Channel Power MOSFET

800 V, 4.5 W

Features

• ESD Diode−Protected Gate

• 100% Avalanche Tested

http://onsemi.com

R MAX

DS(ON)

• 100% Rg Tested

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

(BR)DSS

800 V

4.5 W @ 10 V

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Continuous Drain Current R

Symbol NDD

NDF

800

Unit

N-Channel

DSS

D (2)

2.9

3.3

(Note 1)

Continuous Drain Current

1.9

2.1

(Note 1)

, T = 100°C

Pulsed Drain Current, V @ 10 V

G (1)

Power Dissipation R

Gate−to−Source Voltage

S (3)

Single Pulse Avalanche Energy, I

2.5 A

100

ESD (HBM) (JESD22−A114)

2300

4500

esd

RMS Isolation Voltage (t = 0.3 sec.,

ISO

R.H. ≤ 30%, T = 25°C) (Figure 14)

Peak Diode Recovery (Note 2)

dv/dt

4.5

3.3

V/ns

Continuous Source Current

(Body Diode)

Maximum Temperature for Soldering

Leads

260

°C

NDD03N80Z−1G

IPAK

CASE 369D

NDF03N80ZH

TO−220FP

CASE 221AH

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

NDD03N80ZT4G

DPAK

2. I = 3.3 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

CASE 369AA

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Publication Order Number:

August, 2012 − Rev. 0

NDD03N80Z/D

12 3 4 5 6 7 8

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