Datasheet > NDD04N50Z

NDD04N50Z

更新时间： 2024-11-02 05:52:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	123K
描述
N-Channel Power MOSFET 500 V, 2.7

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中文翻译

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数据手册

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NDD04N50Z 数据手册

NDP04N50Z, NDD04N50Z

N-Channel Power MOSFET

500 V, 2.7 W

Features

• Low ON Resistance

• Low Gate Charge

http://onsemi.com

• 100% Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

DSS

(MAX) @ 1.5 A

DS(on)

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

500 V

2.7 W

Rating

Symbol

NDP

NDD

Unit

Drain−to−Source Voltage

Continuous Drain Current R

Continuous Drain Current

DSS

500

N−Channel

3.4

2.1

3.0

1.9

D (2)

, T = 100°C

Pulsed Drain Current, V @ 10 V

Power Dissipation R

G (1)

Gate−to−Source Voltage

Single Pulse Avalanche Energy,

120

= 3.4 A

S (3)

ESD (HBM) (JESD22−A114)

2800

V/ns

esd

Peak Diode Recovery

dv/dt

4.5 (Note 1)

3.4

Continuous Source Current

(Body Diode)

Maximum Temperature for Soldering

Leads

260

°C

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

IPAK

CASE 369D

STYLE 2

DPAK

CASE 369AA

STYLE 2

TO−220AB

CASE 221A

STYLE 5

1. I v 3.4 A, di/dt ≤ 200 A/ms, V ≤ BV

, T ≤ 150°C.

DSS

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Publication Order Number:

July, 2010 − Rev. 0

NDD04N50Z/D

12 3 4 5 6 7...9

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