NDD03N50ZT4G

更新时间： 2024-09-27 05:52:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	114K
描述
N-Channel Power MOSFET 500 V, 3.3

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NDD03N50ZT4G 数据手册

NDD03N50Z

N-Channel Power MOSFET

500 V, 3.3 W

Features

• Low ON Resistance

• Low Gate Charge

http://onsemi.com

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

DSS

(MAX) @ 1.15 A

DS(on)

Compliant

500 V

3.3 W

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

500

2.6

Unit

N−Channel

Drain−to−Source Voltage

Continuous Drain Current R

Continuous Drain Current

DSS

D (2)

1.7

, T = 100°C

Pulsed Drain Current, V @ 10 V

G (1)

Power Dissipation R

Gate−to−Source Voltage

Single Pulse Avalanche Energy,

120

S (3)

= 2.6 A

ESD (HBM) (JESD22−A114)

2000

4.5 (Note 1)

2.6

V/ns

esd

Peak Diode Recovery

dv/dt

Continuous Source Current

(Body Diode)

Maximum Temperature for Soldering

Leads

260

°C

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

stg

DPAK

CASE 369AA

STYLE 2

IPAK

CASE 369D

STYLE 2

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

1. I v 2.6 A, di/dt ≤ 200 A/ms, V ≤ BV

, T ≤ 150°C.

DSS

Publication Order Number:

July, 2010 − Rev. 0

NDD03N50Z/D

12 3 4 5 6 7 8

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