Datasheet > MT3S111P

MT3S111P

更新时间： 2024-09-12 12:23:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	169K
描述
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications

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MT3S111P 数据手册

MT3S111P

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type

MT3S111P

VHF-UHF Low-Noise, Low-Distortion Amplifier Applications

Unit: mm

Features

•

Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz)

High Gain: |S |²=10.5 dB (typ.) (@f=1 GHz)

21e

Marking

R 5

PW-Mini

JEDEC

⎯

JEITA

SC-62

2-5K1A

Absolute Maximum Ratings (Ta = 25°C)

TOSHIBA

Weight:0.05 g (typ.)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector-current

CES

CEO

EBO

0.6

100

Base-current

Collector power dissipation

Junction temperature

Storage temperature range

300

P (Note 1)

150

°C

−55 to 150

stg

Note 1: The device is mounted on a ceramic board (16 mm×16 mm×0.8 mm (t))

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-03-31

12 3 4 5

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