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MT3S113 PDF预览

MT3S113

更新时间: 2024-11-29 11:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器
页数 文件大小 规格书
7页 210K
描述
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

MT3S113 数据手册

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MT3S113  
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type  
MT3S113  
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications  
Unit: mm  
FEATURES  
Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz)  
High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz)  
Marking  
R 7  
1. Base  
2. Emitter  
3. Collector  
S-Mini  
JEDEC  
JEITA  
TO-236  
SC-59  
Absolute Maximum Ratings (Ta = 25°C)  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector-current  
V
13  
5.3  
V
V
CES  
CEO  
EBO  
V
V
0.6  
V
I
100  
mA  
mA  
mW  
°C  
°C  
C
Base-current  
I
10  
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note1)  
C
800  
T
j
150  
T
55 to 150  
stg  
Note1:The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))  
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant  
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2009-12-01  

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