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MT3S14FS PDF预览

MT3S14FS

更新时间: 2024-11-29 04:14:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 148K
描述
VHF~UHF Band Low-Noise Amplifier Applications

MT3S14FS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.4
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.03 A基于收集器的最大容量:0.75 pF
集电极-发射极最大电压:2.5 V配置:SINGLE
最小直流电流增益 (hFE):90最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.085 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):11000 MHzBase Number Matches:1

MT3S14FS 数据手册

 浏览型号MT3S14FS的Datasheet PDF文件第2页浏览型号MT3S14FS的Datasheet PDF文件第3页 
MT3S14FS  
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type  
MT3S14FS  
Unit: mm  
VHF~UHF Band Low-Noise Amplifier Applications  
VHF~UHF Band Buffer Applications  
Superior performance in buffer applications  
Superior noise characteristics  
1
3
:NF = 1.7 dB, |S21e|2 = 7 dB (f =2GHz)  
2
0.8±0.05  
1.0±0.05  
0.1±0.05  
0.1±0.05  
Absolute Maximum Ratings (Ta = 25°C)  
1.BASE  
2.EMITTER  
Characteristic  
Symbol  
Rating  
Unit  
fSM  
3.COLLECOTR  
Collector- base voltage  
Collector- emitter voltage  
Emitter- base voltage  
Collector current  
V
CBO  
V
CEO  
V
EBO  
6
2.5  
V
V
JEDEC  
1.5  
V
JEITA  
I
30  
mA  
mW  
mW  
°C  
°C  
C
TOSHIBA  
2-1E1A  
Base current  
I
10  
B
Weight: 0.0006g (typ.)  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note)  
C
85  
T
j
125  
55~125  
T
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.  
Marking  
2
1
3
0 H  
1
2007-11-01  

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