Datasheet > MT3S113TU

MT3S113TU

更新时间： 2022-03-18 04:52:55

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
7页	185K
描述
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

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MT3S113TU 数据手册

MT3S113TU

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type

MT3S113TU

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

Unit: mm

2.1±0.1

1.7±0.1

FEATURES

•

Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz)

High Gain:|S21e|²=12.5dB(Typ.) (@ f=1GHz)

Marking

1. ベース

1. Base

2. エミッタ

2. Emitter

R 7

3. コレクタ

3. Collector

UFM

JEDEC

JEITA

TOSHIBA

2-2U1B

Absolute Maximum Ratings (Ta = 25°C)

Weight : 6.6mg (typ.)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector-current

5.3

CES

CEO

EBO

0.6

100

°C

Base-current

Collector power dissipation

Junction temperature

Storage temperature range

P (Note1)

900

150

−55 to 150

stg

Note1:The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-01

12 3 4 5 6 7

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