Datasheet > MT3S113P

MT3S113P

更新时间： 2024-09-12 12:23:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
7页	191K
描述
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

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MT3S113P 数据手册

MT3S113P

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type

MT3S113P

VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications

Unit: mm

FEATURES

•

Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz)

High Gain:|S21e|²=10.5dB(Typ.) (@ f=1GHz)

Marking

R 7

Pw-Mini

JEDEC

JEITA

SC-62

2-5K1A

Absolute Maximum Ratings (Ta = 25°C)

TOSHIBA

Weight : 0.05 g ( typ.)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

5.3

CES

CEO

EBO

0.6

100

Base current

Collector power dissipation

Junction temperature

Storage temperature range

P (Note1)

1.6

150

°C

−55 to 150

stg

Note1:The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))

Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-01

12 3 4 5 6 7

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