Datasheet > MT3S111TU

MT3S111TU

更新时间： 2024-09-12 12:50:55

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	162K
描述
VHF-UHF Low-Noise, Low-Distortion Amplifier Application

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MT3S111TU 数据手册

MT3S111TU

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type

MT3S111TU

VHF-UHF Low-Noise, Low-Distortion Amplifier Application

Unit: mm

2.1±0.1

1.7±0.1

Features

•

Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz)

High Gain: |S |²=12.5 dB (typ.) (@ f=1 GHz)

21e

Marking

1. BASE

2. EMITTER

3. COLLECTOR

R 5

UFM

JEDEC

JEITA

Absolute Maximum Ratings (Ta = 25°C)

TOSHIBA

2-2U1B

Weight: 6.6 mg (typ.)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector-current

CES

CEO

EBO

0.6

100

°C

Base-current

Collector power dissipation

Junction temperature

Storage temperature range

800

C(Note 1)

150

−55 to 150

stg

Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-03-31

12 3 4 5

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