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MRF21030LR5 PDF预览

MRF21030LR5

更新时间: 2024-11-15 12:10:39
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
9页 716K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

MRF21030LR5 数据手册

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Document Number: MRF21030  
Rev. 12, 5/2006  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
Designed for PCN and PCS base station applications with frequencies from  
2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier  
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL  
applications.  
MRF21030LR3  
MRF21030LSR3  
Wideband CDMA Performance: --45 dB ACPR @ 4.096 MHz, 28 Volts  
Output Power — 3.5 Watts  
Power Gain — 14 dB  
Efficiency — 15%  
2200 MHz, 30 W, 28 V  
LATERAL N--CHANNEL  
RF POWER MOSFETs  
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW  
Output Power  
Features  
High Gain, High Efficiency and High Linearity  
Integrated ESD Protection  
Designed for Maximum Gain and Insertion Phase Flatness  
Excellent Thermal Stability  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Low Gold Plating Thickness on Leads, 40μ″ Nominal.  
RoHS Compliant  
CASE 465E--04, STYLE 1  
NI--400  
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.  
MRF21030LR3  
CASE 465F--04, STYLE 1  
NI--400S  
MRF21030LSR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain--Source Voltage  
Gate--Source Voltage  
V
--0.5, +65  
--0.5, +15  
DSS  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
83.3  
0.48  
W
W/°C  
C
D
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
-- 65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Value  
Unit  
R
θ
2.1  
°C/W  
JC  
Table 3. ESD Protection Characteristics  
Test Conditions  
Class  
Human Body Model  
Machine Model  
2 (Minimum)  
M3 (Minimum)  
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.  

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