5秒后页面跳转
MMG300WB170B PDF预览

MMG300WB170B

更新时间: 2024-11-22 17:15:31
品牌 Logo 应用领域
宏微 - MACMIC 双极性晶体管
页数 文件大小 规格书
6页 1839K
描述
IGBT 模块

MMG300WB170B 数据手册

 浏览型号MMG300WB170B的Datasheet PDF文件第2页浏览型号MMG300WB170B的Datasheet PDF文件第3页浏览型号MMG300WB170B的Datasheet PDF文件第4页浏览型号MMG300WB170B的Datasheet PDF文件第5页浏览型号MMG300WB170B的Datasheet PDF文件第6页 
MMG300WB170B  
1700V 300A IGBT Module  
February 2016  
Version 01  
RoHS Compliant  
PRODUCT FEATURES  
High short circuit capability,self limiting short circuit current  
IGBT CHIP(Highly rugged SPT+ design)  
VCE(sat) with positive temperature coefficient  
Ultra Low Loss,High Ruggedness  
Free wheeling diodes with fast and soft reverse recovery  
Temperature sense included  
APPLICATIONS  
AC motor control  
Motion/servo control  
Inverter and power supplies  
Photovoltaic/Fuel cell  
IGBT-inverter  
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)  
Symbol  
VCES  
Parameter/Test Conditions  
Values  
1700  
Unit  
V
TJ=25  
Collector Emitter Voltage  
Gate Emitter Voltage  
VGES  
±20  
450  
300  
600  
2000  
TC=25,TJmax=175℃  
IC  
DC Collector Current  
TC=100,TJmax=175℃  
tp=1ms  
A
ICM  
Ptot  
Repetitive Peak Collector Current  
Power Dissipation Per IGBT  
TC=25,TJmax=175℃  
W
Diode-inverter  
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)  
Symbol  
VRRM  
Parameter/Test Conditions  
Values  
1700  
Unit  
V
TJ=25℃  
Repetitive Reverse Voltage  
Average Forward Current  
IF(AV)  
IFRM  
I2t  
300  
600  
A
Repetitive Peak Forward Current  
tp=1ms  
A2S  
TJ =150, t=10ms, VR=0V  
12500  
MacMic Science & Technology Co., Ltd.  
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China  
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com  
1

与MMG300WB170B相关器件

型号 品牌 获取价格 描述 数据表
MMG3010NT1 NXP

获取价格

0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 4.5 X 2.5 MM, 1.5 MM HEIGHT,
MMG3010NT1 FREESCALE

获取价格

Heterojunction Bipolar Transistor (InGaP HBT)
MMG3010NT1_08 FREESCALE

获取价格

Heterojunction Bipolar Transistor (InGaP HBT)
MMG3011NT1 FREESCALE

获取价格

Heterojunction Bipolar Transistor (InGaP HBT)
MMG3011NT1_12 FREESCALE

获取价格

Heterojunction Bipolar Transistor
MMG3012N NXP

获取价格

InGaP HBT GPA, 0-6000 MHz, 19 dB, 18.5 dBm
MMG3012NT1 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_08 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_12 FREESCALE

获取价格

Heterojunction Bipolar Transistor
MMG3013NT1 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)