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MMG3013NT1_08

更新时间: 2024-11-21 05:49:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
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15页 306K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

MMG3013NT1_08 数据手册

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Document Number: MMG3013NT1  
Rev. 6, 3/2008  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
Broadband High Linearity Amplifier  
MMG3013NT1  
The MMG3013NT1 is a General Purpose Amplifier that is internally  
input matched and internally output matched. It is designed for a broad  
range of Class A, small-signal, high linearity, general purpose applica-  
tions. It is suitable for applications with frequencies from 0 to 6000 MHz  
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and  
general small-signal RF.  
0-6000 MHz, 20 dB  
20.5 dBm  
InGaP HBT  
Features  
Frequency: 0-6000 MHz  
P1dB: 20.5 dBm @ 900 MHz  
Small-Signal Gain: 20 dB @ 900 MHz  
Third Order Output Intercept Point: 36 dBm @ 900 MHz  
Single 5 Volt Supply  
Internally Matched to 50 Ohms  
Low Cost SOT-89 Surface Mount Package  
RoHS Compliant  
1
2
3
CASE 1514-02, STYLE 1  
SOT-89  
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.  
PLASTIC  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Characteristic  
Symbol 900 2140 3500 Unit  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
MHz MHz  
MHz  
V
7
300  
CC  
CC  
Small-Signal Gain  
(S21)  
G
20  
17  
-19  
-9  
14.5  
dB  
dB  
p
Supply Current  
I
mA  
dBm  
°C  
RF Input Power  
P
12  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1db  
IP3  
-17  
-11  
-15  
-12  
19  
Storage Temperature Range  
T
stg  
-65 to +150  
150  
(2)  
Junction Temperature  
T
°C  
Output Return Loss  
(S22)  
dB  
J
2. For reliable operation, the junction temperature should not  
exceed 150°C.  
Power Output @1dB  
Compression  
20.5 20.5  
dBm  
dBm  
Third Order Output  
Intercept Point  
36  
34  
32  
1. V = 5 Vdc, T = 25°C, 50 ohm system  
CC  
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 90 mA, T = 25°C)  
CC  
CC  
C
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
42  
°C/W  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.  

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