Datasheet > MMG3H21NT1

MMG3H21NT1

更新时间： 2024-11-01 05:49:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体放大器晶体管射频微波功率放大器 PC
页数	文件大小	规格书
15页	282K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

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MMG3H21NT1 数据手册

Document Number: MMG3H21NT1

Rev. 0, 4/2008

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMG3H21NT1

Broadband High Linearity Amplifier

The MMG3H21NT1 is a General Purpose Amplifier that is internally

input matched and internally output matched. It is designed for a broad

range of Class A, small-signal, high linearity, general purpose applica-

tions. It is suitable for applications with frequencies from 0 to 6000 MHz

such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and

general small-signal RF.

0-6000 MHz, 19.3 dB

20.5 dBm

InGaP HBT

Features

• Frequency: 0-6000 MHz

• P1dB: 20.5 dBm @ 900 MHz

• Small-Signal Gain: 19.3 dB @ 900 MHz

• Third Order Output Intercept Point: 37 dBm @ 900 MHz

• Single 5 Volt Supply

• Active Bias

CASE 1514-02, STYLE 1

SOT-89

• Internally Matched to 50 Ohms

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

PLASTIC

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Characteristic

Symbol 900 2140 3500 Unit

Rating

Supply Voltage

Symbol

Value

Unit

MHz MHz

MHz

300

Small-Signal Gain

(S21)

19.3

-18

-10

-25

-6

Supply Current

dBm

°C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1db

IP3

-20

-8

Storage Temperature Range

stg

-65 to +150

150

(2)

Junction Temperature

°C

Output Return Loss

(S22)

2. For reliable operation, the junction temperature should not

exceed 150°C.

Power Output @1dB

Compression

20.5 19.8

17.7 dBm

Third Order Output

Intercept Point

dBm

1. V = 5 Vdc, T = 25°C, 50 ohm system

Table 3. Thermal Characteristics (V = 5 Vdc, I = 90 mA, T = 25°C)

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

38.6

°C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MMG3H21NT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

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