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MMG3H21NT1

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描述
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

MMG3H21NT1 数据手册

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Document Number: MMG3H21NT1  
Rev. 0, 4/2008  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
MMG3H21NT1  
Broadband High Linearity Amplifier  
The MMG3H21NT1 is a General Purpose Amplifier that is internally  
input matched and internally output matched. It is designed for a broad  
range of Class A, small-signal, high linearity, general purpose applica-  
tions. It is suitable for applications with frequencies from 0 to 6000 MHz  
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and  
general small-signal RF.  
0-6000 MHz, 19.3 dB  
20.5 dBm  
InGaP HBT  
Features  
Frequency: 0-6000 MHz  
P1dB: 20.5 dBm @ 900 MHz  
Small-Signal Gain: 19.3 dB @ 900 MHz  
Third Order Output Intercept Point: 37 dBm @ 900 MHz  
Single 5 Volt Supply  
1
2
3
Active Bias  
CASE 1514-02, STYLE 1  
SOT-89  
Internally Matched to 50 Ohms  
Low Cost SOT-89 Surface Mount Package  
RoHS Compliant  
PLASTIC  
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Characteristic  
Symbol 900 2140 3500 Unit  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
MHz MHz  
MHz  
V
7
300  
CC  
CC  
Small-Signal Gain  
(S21)  
G
19.3  
-18  
-10  
16  
-25  
-6  
14  
dB  
dB  
dB  
p
Supply Current  
I
mA  
dBm  
°C  
RF Input Power  
P
12  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1db  
IP3  
-20  
-8  
Storage Temperature Range  
T
stg  
-65 to +150  
150  
(2)  
Junction Temperature  
T
°C  
Output Return Loss  
(S22)  
J
2. For reliable operation, the junction temperature should not  
exceed 150°C.  
Power Output @1dB  
Compression  
20.5 19.8  
17.7 dBm  
Third Order Output  
Intercept Point  
37  
34  
31  
dBm  
1. V = 5 Vdc, T = 25°C, 50 ohm system  
CC  
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 90 mA, T = 25°C)  
CC  
CC  
C
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
38.6  
°C/W  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.