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MMG50S120B6UC PDF预览

MMG50S120B6UC

更新时间: 2024-09-27 17:15:19
品牌 Logo 应用领域
宏微 - MACMIC 双极性晶体管
页数 文件大小 规格书
6页 199K
描述
IGBT 模块

MMG50S120B6UC 数据手册

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MMG50S120B6UC  
1200V 50A IGBT Module  
December 2018  
Version 01  
RoHS Compliant  
PRODUCT FEATURES  
IGBT chip in trench FS-technology  
Low switching losses  
VCE(sat) with positive temperature coefficient  
Fast switching and short tail current  
Free wheeling diodes with fast and soft reverse recovery  
APPLICATIONS  
Welding Machine  
Power Supplies  
Others  
IGBT-inverter  
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)  
Symbol  
VCES  
Parameter/Test Conditions  
Values  
1200  
Unit  
V
TJ=25  
Collector Emitter Voltage  
Gate Emitter Voltage  
VGES  
±20  
75  
TC=25,TJmax=175℃  
IC  
DC Collector Current  
TC=95,TJmax=175℃  
tp=1ms  
50  
A
ICM  
Ptot  
Repetitive Peak Collector Current  
Power Dissipation Per IGBT  
100  
300  
TC=25,TJmax=175℃  
W
Diode-inverter  
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)  
Symbol  
VRRM  
Parameter/Test Conditions  
Values  
1200  
Unit  
V
TJ=25℃  
Repetitive Reverse Voltage  
Average Forward Current  
IF(AV)  
IFRM  
I2t  
50  
A
Repetitive Peak Forward Current  
tp=1ms  
100  
250  
A2S  
TJ =125, t=10ms, VR=0V  
MacMic Science & Technology Co., Ltd.  
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China  
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com  
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