Datasheet > MMG50S120B6UC

MMG50S120B6UC

更新时间： 2024-11-02 17:15:19

品牌	Logo	应用领域
宏微 - MACMIC		双极性晶体管
页数	文件大小	规格书
6页	199K
描述
IGBT 模块

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中文翻译

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数据手册

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MMG50S120B6UC 数据手册

MMG50S120B6UC

1200V 50A IGBT Module

December 2018

Version 01

RoHS Compliant

PRODUCT FEATURES

□ IGBT chip in trench FS-technology

□ Low switching losses

□ V_CE(sat)with positive temperature coefficient

□ Fast switching and short tail current

□ Free wheeling diodes with fast and soft reverse recovery

APPLICATIONS

□ Welding Machine

□ Power Supplies

□ Others

IGBT-inverter

ABSOLUTE MAXIMUM RATINGS(T _C=25°C unless otherwise specified)

Symbol

V_CES

Parameter/Test Conditions

Values

1200

Unit

T_J=25℃

Collector Emitter Voltage

Gate Emitter Voltage

V_GES

±20

T_C=25℃,T_Jmax=175℃

I_C

DC Collector Current

T_C=95℃,T_Jmax=175℃

tp=1ms

I_CM

P_tot

Repetitive Peak Collector Current

Power Dissipation Per IGBT

100

300

T_C=25℃,T_Jmax=175℃

Diode-inverter

ABSOLUTE MAXIMUM RATINGS (T _C=25°C unless otherwise specified)

Symbol

V_RRM

Parameter/Test Conditions

Values

1200

Unit

T_J=25℃

Repetitive Reverse Voltage

Average Forward Current

I_F(AV)

I_FRM

I²t

Repetitive Peak Forward Current

tp=1ms

100

250

A²S

T_J=125℃, t=10ms, V_R=0V

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

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