Datasheet > MMG80C120BF_Y1

MMG80C120BF_Y1

更新时间： 2024-11-02 17:15:43

品牌	Logo	应用领域
宏微 - MACMIC		双极性晶体管
页数	文件大小	规格书
10页	507K
描述
IGBT 模块

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数据手册

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MMG80C120BF_Y1 数据手册

MMG80C120BF_Y1

1200V 80A IGBT Module

December 2020

Version 01

RoHS Compliant

PRODUCT FEATURES

□ Mixed voltage component topology

□ Neutral point clamped inverter

□ Reactive power capability

□ Low inductance layout

APPLICATIONS

□ Solar inverter

□ UPS

V_CES

I_C

T_Jmax

175°C

Type

Marking

Package

MMG80C120BF_Y1

1200V

30A

MMG80C120BF_Y1

Half Bridge IGBT(T1 T2)

ABSOLUTE MAXIMUM RATINGS(T _C=25°C unless otherwise specified)

Symbol

V_CES

Parameter/Test Conditions

Values

Unit

T_J=25℃

Collector Emitter Voltage

Gate Emitter Voltage

1200

±20

V_GES

I_CN

Implemented Collector Current

T_C=25℃, T_Jmax=175℃

T_C=100℃, T_Jmax=175℃

tp=1ms

I_C

Continuous DC Collector Current

I_CM

P_tot

Repetitive Peak Collector Current

Power Dissipation Per IGBT

160

277

T_C=25℃, T_Jmax=175℃

Half Bridge Diode(D1 D2)

ABSOLUTE MAXIMUM RATINGS (T _C=25°C unless otherwise specified)

Symbol

V_RRM

Parameter/Test Conditions

Values

1200

Unit

T_J=25℃

Repetitive Reverse Voltage

I_FN

I_F

Implemented Forward Current

Continuous DC Forward Current

Repetitive Peak Forward Current

I_FRM

I²t

tp=1ms

100

295

A²s

T_J=125℃, t=10ms, V_R=0V

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

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