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MMG600WB170B6E4N PDF预览

MMG600WB170B6E4N

更新时间: 2024-11-18 17:15:35
品牌 Logo 应用领域
宏微 - MACMIC 双极性晶体管
页数 文件大小 规格书
6页 241K
描述
IGBT 模块

MMG600WB170B6E4N 数据手册

 浏览型号MMG600WB170B6E4N的Datasheet PDF文件第2页浏览型号MMG600WB170B6E4N的Datasheet PDF文件第3页浏览型号MMG600WB170B6E4N的Datasheet PDF文件第4页浏览型号MMG600WB170B6E4N的Datasheet PDF文件第5页浏览型号MMG600WB170B6E4N的Datasheet PDF文件第6页 
MMG600WB170B6E4N  
1700V 600A IGBT Module  
March 2020  
Version 01  
RoHS Compliant  
PRODUCT FEATURES  
IGBT4 CHIP(1700V Trench+Field Stop technology)  
Low turn-off losses, short tail current  
VCE(sat) with positive temperature coefficient  
DIODE CHIP(1700V EMCON 3 technology)  
Free wheeling diodes with fast and soft reverse recovery  
Temperature sense included  
APPLICATIONS  
AC motor control  
Motion/servo control  
Inverter and power supplies  
Photovoltaic/Fuel cell  
IGBT-inverter  
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)  
Symbol  
VCES  
Parameter/Test Conditions  
Values  
Unit  
V
TJ=25  
Collector Emitter Voltage  
Gate Emitter Voltage  
1700  
±20  
VGES  
TC=25, TJmax=175℃  
960  
IC  
DC Collector Current  
TC=100, TJmax=175℃  
tp=1ms  
600  
A
ICM  
Ptot  
Repetitive Peak Collector Current  
Power Dissipation Per IGBT  
1200  
3750  
TC=25, TJmax=175℃  
W
Diode-inverter  
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)  
Symbol  
VRRM  
Parameter/Test Conditions  
Values  
1700  
Unit  
V
TJ=25℃  
Repetitive Reverse Voltage  
Average Forward Current  
IF(AV)  
IFRM  
I2t  
600  
1200  
32000  
A
Repetitive Peak Forward Current  
tp=1ms  
A2S  
TJ =125, t=10ms, VR=0V  
MacMic Science & Technology Co., Ltd.  
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China  
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com  
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