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MMG50S170B PDF预览

MMG50S170B

更新时间: 2024-11-02 17:15:51
品牌 Logo 应用领域
宏微 - MACMIC 双极性晶体管
页数 文件大小 规格书
6页 907K
描述
IGBT 模块

MMG50S170B 数据手册

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MMG50S170B  
1700V 50A IGBT Module  
July 2016  
Preliminary  
RoHS Compliant  
PRODUCT FEATURES  
High short circuit capability,self limiting short circuit current  
IGBT CHIP(Highly rugged SPT+ design)  
VCE(sat) with positive temperature coefficient  
Ultra Low Loss,High Ruggedness  
Free wheeling diodes with fast and soft reverse recovery  
APPLICATIONS  
AC motor control  
Motion/servo control  
Inverter and power supplies  
Photovoltaic/Fuel cell  
IGBT-inverter  
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)  
Symbol  
VCES  
Parameter/Test Conditions  
Values  
1700  
Unit  
V
TJ=25  
Collector Emitter Voltage  
Gate Emitter Voltage  
VGES  
±20  
75  
TC=25,TJmax=175℃  
IC  
DC Collector Current  
TC=100,TJmax=175℃  
tp=1ms  
50  
A
ICM  
Ptot  
Repetitive Peak Collector Current  
Power Dissipation Per IGBT  
100  
395  
TC=25,TJmax=175℃  
W
Diode-inverter  
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)  
Symbol  
VRRM  
Parameter/Test Conditions  
Values  
1700  
Unit  
V
TJ=25℃  
Repetitive Reverse Voltage  
Average Forward Current  
IF(AV)  
IFRM  
I2t  
50  
A
Repetitive Peak Forward Current  
tp=1ms  
100  
650  
A2S  
TJ =150, t=10ms, VR=0V  
MacMic Science & Technology Co., Ltd.  
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China  
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com  
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