5秒后页面跳转
MMG3014NT1 PDF预览

MMG3014NT1

更新时间: 2024-11-18 03:02:07
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
页数 文件大小 规格书
17页 350K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

MMG3014NT1 数据手册

 浏览型号MMG3014NT1的Datasheet PDF文件第2页浏览型号MMG3014NT1的Datasheet PDF文件第3页浏览型号MMG3014NT1的Datasheet PDF文件第4页浏览型号MMG3014NT1的Datasheet PDF文件第5页浏览型号MMG3014NT1的Datasheet PDF文件第6页浏览型号MMG3014NT1的Datasheet PDF文件第7页 
Document Number: MMG3014NT1  
Rev. 0, 4/2008  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
MMG3014NT1  
Broadband High Linearity Amplifier  
The MMG3014NT1 is a General Purpose Amplifier that is internally  
input matched and internally output prematched. It is designed for a broad  
range of Class A, small-signal, high linearity, general purpose applica-  
tions. It is suitable for applications with frequencies from 40 to 4000 MHz  
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and  
general small-signal RF.  
40-4000 MHz, 19.5 dB  
25 dBm  
InGaP HBT  
Features  
Frequency: 40-4000 MHz  
P1dB: 25 dBm @ 900 MHz  
Small-Signal Gain: 19.5 dB @ 900 MHz  
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz  
Single 5 Volt Supply  
1
2
3
CASE 1514-02, STYLE 1  
SOT-89  
Active Bias  
Low Cost SOT-89 Surface Mount Package  
RoHS Compliant  
PLASTIC  
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Characteristic  
Symbol 900 2140 3500 Unit  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
MHz MHz  
MHz  
V
6
300  
CC  
CC  
Small-Signal Gain  
(S21)  
G
19.5  
-25  
-11  
25  
15  
-12  
−13  
10  
dB  
dB  
p
Supply Current  
I
mA  
dBm  
°C  
RF Input Power  
P
15  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1db  
IP3  
-8  
-19  
25  
Storage Temperature Range  
T
stg  
-65 to +150  
150  
(2)  
Junction Temperature  
T
°C  
Output Return Loss  
(S22)  
dB  
J
2. For reliable operation, the junction temperature should not  
exceed 150°C.  
Power Output @1dB  
Compression  
25.8  
dBm  
dBm  
Third Order Output  
Intercept Point  
40.5 40.5  
40  
1. V = 5 Vdc, T = 25°C, 50 ohm system  
CC  
C
Table 3. Thermal Characteristics (V = 5 Vdc, I = 135 mA, T = 25°C)  
CC  
CC  
C
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
JC  
27.4  
°C/W  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2008. All rights reserved.  

与MMG3014NT1相关器件

型号 品牌 获取价格 描述 数据表
MMG3014NT1_08 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3015NT1 FREESCALE

获取价格

Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3015NT1_12 FREESCALE

获取价格

Heterojunction Bipolar Transistor
MMG30271B NXP

获取价格

Driver or Pre--driver General Purpose Amplifier
MMG30271BT1 NXP

获取价格

Driver or Pre--driver General Purpose Amplifier
MMG30301B NXP

获取价格

HBT GPA/LNA, 450-4000 MHz, 30 dB, 17 dBm
MMG30301BT1 NXP

获取价格

Telecom Circuit
MMG35CB120X6TC MACMIC

获取价格

IGBT 模块
MMG35CE120XB6TC MACMIC

获取价格

IGBT 模块
MMG35HD120XB6TC MACMIC

获取价格

IGBT 模块