Datasheet > MMG30301B

MMG30301B

更新时间： 2024-11-19 15:19:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
28页	1255K
描述
HBT GPA/LNA, 450-4000 MHz, 30 dB, 17 dBm

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MMG30301B 数据手册

Document Number: MMG30301B

Rev. 0, 10/2016

NXP Semiconductors

Technical Data

Driver or Pre--driver Amplifier

for Doherty Power Amplifiers

MMG30301BT1

The MMG30301B is a 1 W high gain amplifier designed as a driver or pre--driver

for Doherty power amplifiers in wireless infrastructure equipment operating in

the 900 to 4300 MHz frequency range. Because of its versatile design, the

device may also be used in a variety of general purpose amplifier applications,

including those at frequencies from 900 to 4300 MHz.

900–4300 MHz, 16.2 dB @ 2140 MHz

30.1 dBm

BTS DRIVER AMPLIFIER

Features

•

P1dB: 30.1 dBm @ 2140 MHz

Gain: 16.2 dB @ 2140 MHz

Designed as a Doherty PA driver or pre--driver

5 V single supply, 258 mA current

SOT--89 package

SOT--89

50 ohm operation with minimal external matching

Table 1. Load Pull Performance ⁽¹⁾

Characteristic

Symbol

MAG

900 MHz

1900 MHz

2140 MHz

16.9

2600 MHz

15.2

3350 MHz

13.3

Unit

Maximum Available Gain

24.1

17.9

(2)

@ 1dB Compression

P1dB

30.0

30.1

30.4

30.1

dBm

out

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

Supply Current

480

dBm

°C

RF Input Power

Storage Temperature Range

Junction Temperature

stg

–65 to +150

175

°C

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 91°C, 5 Vdc, 280 mA, no RF applied

1. V = 5 Vdc, T = 25°C, CW.

2. Maximum allowable current not to exceed 480 mA.

3. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

MMG30301BT1

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...28

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