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MMG30271BT1 PDF预览

MMG30271BT1

更新时间: 2024-11-19 01:23:31
品牌 Logo 应用领域
恩智浦 - NXP 电信电信集成电路
页数 文件大小 规格书
25页 1042K
描述
Driver or Pre--driver General Purpose Amplifier

MMG30271BT1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SOT-89, 3 PIN
Reach Compliance Code:compliant风险等级:1.79
JESD-30 代码:R-PSSO-F3长度:4.5 mm
湿度敏感等级:1功能数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装代码:LSOF封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:1.6 mm标称供电电压:5 V
表面贴装:YES电信集成电路类型:TELECOM CIRCUIT
端子形式:FLAT端子节距:1.5 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:2.5 mm

MMG30271BT1 数据手册

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Document Number: MMG30271B  
Rev. 0, 3/2016  
Freescale Semiconductor  
Technical Data  
Driver or Pre--driver  
MMG30271BT1  
General Purpose Amplifier  
The MMG30271B is a 1/2 W, Class AB, high gain amplifier designed as a driver  
or pre--driver for cellular base station Doherty amplifiers and general purpose  
small signal applications. Its versatile design enables operation from  
900–4300 MHz, covering the 3G and 4G cellular bands.  
900–4300 MHz, 17.5 dB @ 2140 MHz  
26.9 dBm  
BTS DRIVER AMPLIFIER  
Features  
P1dB: 26.9 dBm @ 2140 MHz  
Gain: 17.5 dB @ 2140 MHz  
Suitable for Doherty Amplifiers and BTS Transmitters  
5 V Single Supply, 134 mA Quiescent Current  
SOT--89 Package  
SOT--89  
50 Ohm Operation with Minimal External Matching  
Table 1. Load Pull Performance (1)  
Characteristic  
Symbol  
MAG  
900 MHz 1900 MHz 2140 MHz 2600 MHz 3500 MHz 4200 MHz  
Unit  
dB  
Maximum Available Gain  
24.9  
18.9  
17.7  
27.2  
15.7  
27.3  
13.1  
27.4  
12.1  
27.1  
(2)  
(2)  
P
@ 1dB Compression  
P1dB  
29.0  
27.3  
dBm  
out  
Table 2. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Supply Voltage  
V
6
240  
V
mA  
dBm  
C  
CC  
CC  
Supply Current  
I
RF Input Power  
P
23  
in  
Storage Temperature Range  
Junction Temperature  
T
stg  
–65 to +150  
175  
T
C  
J
Table 3. Thermal Characteristics  
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
33  
C/W  
JC  
Case Temperature 65C, 5 Vdc, 138 mA, no RF applied  
1. V = 5 Vdc, T = 25C, CW.  
CC  
A
2. Maximum allowable current not to exceed 240 mA.  
3. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.  
Freescale Semiconductor, Inc., 2016. All rights reserved.  

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