Datasheet > MMG3014NT1_08

MMG3014NT1_08

更新时间： 2024-11-18 05:49:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
17页	436K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

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MMG3014NT1_08 数据手册

Document Number: MMG3014NT1

Rev. 1, 9/2008

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMG3014NT1

Broadband High Linearity Amplifier

The MMG3014NT1 is a General Purpose Amplifier that is internally

input matched and internally output prematched. It is designed for a broad

range of Class A, small-signal, high linearity, general purpose applica-

tions. It is suitable for applications with frequencies from 40 to 4000 MHz

such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and

general small-signal RF.

40-4000 MHz, 19.5 dB

25 dBm

InGaP HBT

Features

• Frequency: 40-4000 MHz

• P1dB: 25 dBm @ 900 MHz

• Small-Signal Gain: 19.5 dB @ 900 MHz

• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

• Single 5 Volt Supply

CASE 1514-02, STYLE 1

SOT-89

• Active Bias

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

PLASTIC

• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

Characteristic

Symbol 900 2140 3500 Unit

MHz MHz

MHz

300

Small-Signal Gain

(S21)

19.5

-25

-11

-12

−13

Supply Current

dBm

°C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1db

IP3

-8

-19

Storage Temperature Range

stg

-65 to +150

150

(2)

Junction Temperature

°C

Output Return Loss

(S22)

2. For reliable operation, the junction temperature should not

exceed 150°C.

Power Output @1dB

Compression

25.8

dBm

Third Order Output

Intercept Point

40.5 40.5

1. V = 5 Vdc, T = 25°C, 50 ohm system, in Freescale

Application Circuits.

Table 3. Thermal Characteristics (V = 5 Vdc, I = 135 mA, T = 25°C)

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

27.4

°C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MMG3014NT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...17

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