Datasheet > MMG30271B

MMG30271B

更新时间： 2024-11-22 01:23:31

品牌	Logo	应用领域
恩智浦 - NXP		/
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描述
Driver or Pre--driver General Purpose Amplifier

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MMG30271B 数据手册

Document Number: MMG30271B

Rev. 0, 3/2016

Freescale Semiconductor

Technical Data

Driver or Pre--driver

MMG30271BT1

General Purpose Amplifier

The MMG30271B is a 1/2 W, Class AB, high gain amplifier designed as a driver

or pre--driver for cellular base station Doherty amplifiers and general purpose

small signal applications. Its versatile design enables operation from

900–4300 MHz, covering the 3G and 4G cellular bands.

900–4300 MHz, 17.5 dB @ 2140 MHz

26.9 dBm

BTS DRIVER AMPLIFIER

Features



P1dB: 26.9 dBm @ 2140 MHz

Gain: 17.5 dB @ 2140 MHz

Suitable for Doherty Amplifiers and BTS Transmitters

5 V Single Supply, 134 mA Quiescent Current

SOT--89 Package

SOT--89

50 Ohm Operation with Minimal External Matching

Table 1. Load Pull Performance ⁽¹⁾

Characteristic

Symbol

MAG

900 MHz 1900 MHz 2140 MHz 2600 MHz 3500 MHz 4200 MHz

Unit

Maximum Available Gain

24.9

18.9

17.7

27.2

15.7

27.3

13.1

27.4

12.1

27.1

(2)

@ 1dB Compression

P1dB

29.0

27.3

dBm

out

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

240

dBm

C

Supply Current

RF Input Power

Storage Temperature Range

Junction Temperature

stg

–65 to +150

175

C

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case



C/W

Case Temperature 65C, 5 Vdc, 138 mA, no RF applied

1. V = 5 Vdc, T = 25C, CW.

2. Maximum allowable current not to exceed 240 mA.

3. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

MMG30271BT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...25

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