Datasheet > MMG3015NT1_12

MMG3015NT1_12

更新时间： 2024-11-18 11:44:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
15页	311K
描述
Heterojunction Bipolar Transistor

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MMG3015NT1_12 数据手册

Document Number: MMG3015NT1

Rev. 2, 2/2012

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMG3015NT1

Broadband High Linearity Amplifier

The MMG3015NT1 is a general purpose amplifier that is internally input

and output matched. It is designed for a broad range of Class A,

small--signal, high linearity, general purpose applications. It is suitable for

applications with frequencies from 0 to 6000 MHz such as cellular, PCS,

BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

0--6000 MHz, 15.5 dB

20.5 dBm

Features

InGaP HBT

•

Frequency: 0--6000 MHz

P1dB: 20.5 dBm @ 900 MHz

Small Signal Gain: 15.5 dB @ 900 MHz

Third Order Output Intercept Point: 36 dBm @ 900 MHz

Single 5 Volt Supply

Active Bias Control

Internally Matched to 50 Ohms

Cost--effective SOT--89 Surface Mount Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

CASE 1514--02, STYLE 1

SOT--89

PLASTIC

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

Characteristic

Symbol 900 2140 3500 Unit

MHz MHz

MHz

300

Small--Signal Gain

(S21)

15.5 14.5

12.5

Supply Current

dBm

°C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

OIP3

-- 1 5

-- 1 3

-- 1 9

-- 9

-- 1 9

-- 7

Storage Temperature Range

stg

--65 to +150

150

(2)

Junction Temperature

°C

Output Return Loss

(S22)

2. For reliable operation, the junction temperature should not

exceed 150°C.

Power Output @1dB

Compression

20.5 20.5

18.5 dBm

30.5 dBm

Third Order Output

Intercept Point

33.5

1. V = 5 Vdc, T = 25°C, 50 ohm system.

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

41.5

°C/W

Case Temperature 95°C, 5 Vdc, 95 mA, no RF applied

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMG3015NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

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