Datasheet > MMG3011NT1_12

MMG3011NT1_12

更新时间： 2024-09-16 11:44:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
15页	357K
描述
Heterojunction Bipolar Transistor

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MMG3011NT1_12 数据手册

Document Number: MMG3011NT1

Rev. 6, 2/2012

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

(InGaP HBT)

Broadband High Linearity Amplifier

MMG3011NT1

The MMG3011NT1 is a general purpose amplifier that is internally

input and output matched. It is designed for a broad range of Class A,

small--signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 0 to 6000 MHz such as cellular,

P C S , B WA , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l

small--signal RF.

0--6000 MHz, 15 dB

15 dBm

Features

InGaP HBT

•

Frequency: 0 to 6000 MHz

P1dB: 15 dBm @ 900 MHz

Small--Signal Gain: 15 dB @ 900 MHz

Third Order Output Intercept Point: 28 dBm @ 900 MHz

Single 5 Volt Supply

Internally Matched to 50 Ohms

Cost--effective SOT--89 Surface Mount Package

In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.

CASE 1514--02, STYLE 1

SOT--89

PLASTIC

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

Characteristic

Symbol 900 2140 3500 Unit

MHz MHz

MHz

Small--Signal Gain

(S21)

-- 1 8

-- 2 5

Supply Current

dBm

°C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

OIP3

-- 2 5

-- 1 8

13.5

26.5

-- 2 5

-- 1 7

Storage Temperature Range

stg

--65 to +150

150

(2)

Junction Temperature

°C

Output Return Loss

(S22)

2. For reliable operation, the junction temperature should not

exceed 150°C.

Power Output @1dB

Compression

13.5 dBm

Third Order Output

Intercept Point

dBm

1. V = 5 Vdc, T = 25°C, 50 ohm system.

Table 3. Thermal Characteristics

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 87°C, 5 Vdc, 41 mA, no RF applied

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMG3011NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

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与MMG3011NT1_12相关器件

型号	品牌	获取价格	描述	数据表
MMG3012N	NXP	获取价格	InGaP HBT GPA, 0-6000 MHz, 19 dB, 18.5 dBm
MMG3012NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor
MMG3013NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3013NT1	NXP	获取价格	0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE
MMG3013NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3013NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor
MMG3014N	NXP	获取价格	2110MHz - 2170MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, SOT-89, 3 PIN
MMG3014NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)

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