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MMG3013NT1

更新时间: 2024-11-18 20:14:03
品牌 Logo 应用领域
恩智浦 - NXP 放大器射频微波功率放大器
页数 文件大小 规格书
15页 400K
描述
0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1514-02, SOT- 89, 3 PIN

MMG3013NT1 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:TO-243Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.68Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:16 dB最大输入功率 (CW):12 dBm
JESD-609代码:e3安装特点:SURFACE MOUNT
功能数量:1端子数量:3
最大工作频率:6000 MHz最小工作频率:
封装主体材料:PLASTIC/EPOXY封装等效代码:TO-243
电源:5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:BIPOLAR端子面层:Matte Tin (Sn)
Base Number Matches:1

MMG3013NT1 数据手册

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Document Number: MMG3013NT1  
Rev. 7, 2/2012  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
Broadband High Linearity Amplifier  
MMG3013NT1  
The MMG3013NT1 is a general purpose amplifier that is internally input  
matched and internally output matched. It is designed for a broad range of  
Class A, small--signal, high linearity, general purpose applications. It is  
suitable for applications with frequencies from 0 to 6000 MHz such as  
cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general  
small--signal RF.  
0--6000 MHz, 20 dB  
20.5 dBm  
InGaP HBT  
Features  
Frequency: 0--6000 MHz  
P1dB: 20.5 dBm @ 900 MHz  
Small--Signal Gain: 20 dB @ 900 MHz  
Third Order Output Intercept Point: 36 dBm @ 900 MHz  
Single 5 Volt Supply  
Internally Matched to 50 Ohms  
Cost--effective SOT--89 Surface Mount Package  
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.  
1
2
3
CASE 1514--02, STYLE 1  
SOT--89  
PLASTIC  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
Characteristic  
Symbol 900 2140 3500 Unit  
MHz MHz  
MHz  
V
7
300  
CC  
CC  
Small--Signal Gain  
(S21)  
G
20  
17  
-- 1 9  
-- 9  
14.5  
dB  
dB  
p
Supply Current  
I
mA  
dBm  
°C  
RF Input Power  
P
12  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1dB  
OIP3  
-- 1 7  
-- 11  
-- 1 5  
-- 1 2  
19  
Storage Temperature Range  
T
stg  
--65 to +150  
150  
(2)  
Junction Temperature  
T
J
°C  
Output Return Loss  
(S22)  
dB  
2. For reliable operation, the junction temperature should not  
exceed 150°C.  
Power Output @1dB  
Compression  
20.5 20.5  
dBm  
dBm  
Third Order Output  
Intercept Point  
36  
34  
32  
1. V = 5 Vdc, T = 25°C, 50 ohm system.  
CC  
A
Table 3. Thermal Characteristics  
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
42  
°C/W  
JC  
Case Temperature 89°C, 5 Vdc, 90 mA, no RF applied  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2005--2008, 2012. All rights reserved.  

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