是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | TO-243 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
风险等级: | 5.68 | Is Samacsys: | N |
特性阻抗: | 50 Ω | 构造: | COMPONENT |
增益: | 16 dB | 最大输入功率 (CW): | 12 dBm |
JESD-609代码: | e3 | 安装特点: | SURFACE MOUNT |
功能数量: | 1 | 端子数量: | 3 |
最大工作频率: | 6000 MHz | 最小工作频率: | |
封装主体材料: | PLASTIC/EPOXY | 封装等效代码: | TO-243 |
电源: | 5 V | 射频/微波设备类型: | WIDE BAND LOW POWER |
子类别: | RF/Microwave Amplifiers | 表面贴装: | YES |
技术: | BIPOLAR | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMG3013NT1_08 | FREESCALE |
获取价格 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
MMG3013NT1_12 | FREESCALE |
获取价格 |
Heterojunction Bipolar Transistor | |
MMG3014N | NXP |
获取价格 |
2110MHz - 2170MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, SOT-89, 3 PIN | |
MMG3014NT1 | FREESCALE |
获取价格 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
MMG3014NT1_08 | FREESCALE |
获取价格 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
MMG3015NT1 | FREESCALE |
获取价格 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) | |
MMG3015NT1_12 | FREESCALE |
获取价格 |
Heterojunction Bipolar Transistor | |
MMG30271B | NXP |
获取价格 |
Driver or Pre--driver General Purpose Amplifier | |
MMG30271BT1 | NXP |
获取价格 |
Driver or Pre--driver General Purpose Amplifier | |
MMG30301B | NXP |
获取价格 |
HBT GPA/LNA, 450-4000 MHz, 30 dB, 17 dBm |