Datasheet > MMG3012NT1

MMG3012NT1

更新时间： 2024-11-06 05:49:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管射频微波
页数	文件大小	规格书
15页	306K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

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MMG3012NT1 数据手册

Document Number: MMG3012NT1

Rev. 5, 3/2008

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

Broadband High Linearity Amplifier

MMG3012NT1

The MMG3012NT1 is a General Purpose Amplifier that is internally

input matched and internally output matched. It is designed for a broad

range of Class A, small-signal, high linearity, general purpose applica-

tions. It is suitable for applications with frequencies from 0 to 6000 MHz

such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and

general small-signal RF.

0 - 6000 MHz, 19 dB

18.5 dBM

InGaP HBT

Features

• Frequency: 0 - 6000 MHz

• P1dB: 18.5 dBm @ 900 MHz

• Small-Signal Gain: 19 dB @ 900 MHz

• Third Order Output Intercept Point: 34 dBm @ 900 MHz

• Single 5 Volt Supply

• Internally Matched to 50 Ohms

• Low Cost SOT-89 Surface Mount Package

• RoHS Compliant

CASE 1514-02, STYLE 1

SOT-89

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

PLASTIC

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Characteristic

Symbol 900 2140 3500 Unit

Rating

Supply Voltage

Symbol

Value

Unit

MHz MHz

MHz

300

Small-Signal Gain

(S21)

-18

18.5

15.8

-20

-12

13.4

Supply Current

dBm

°C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1db

IP3

-17

-16

Storage Temperature Range

stg

-65 to +150

150

(2)

Junction Temperature

°C

Output Return Loss

(S22)

2. For reliable operation, the junction temperature should not

exceed 150°C.

Power Output @1dB

Compression

dBm

Third Order Output

Intercept Point

1. V = 5 Vdc, T = 25°C, 50 ohm system

Table 3. Thermal Characteristics (V = 5 Vdc, I = 70 mA, T = 25°C)

(3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MMG3012NT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

中文翻译

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与MMG3012NT1相关器件

型号	品牌	获取价格	描述	数据表
MMG3012NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor
MMG3013NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3013NT1	NXP	获取价格	0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE
MMG3013NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3013NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor
MMG3014N	NXP	获取价格	2110MHz - 2170MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, SOT-89, 3 PIN
MMG3014NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3014NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3015NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)

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