Datasheet > MMG3010NT1

MMG3010NT1

更新时间： 2024-11-18 02:52:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管射频微波
页数	文件大小	规格书
12页	216K
描述
Heterojunction Bipolar Transistor (InGaP HBT)

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中文翻译

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数据手册

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MMG3010NT1 数据手册

Document Number: MMG3010NT1

Rev. 1, 8/2005

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

(InGaP HBT)

Broadband High Linearity Amplifier

MMG3010NT1

The MMG3010NT1 is a General Purpose Amplifier that is internally

input and output matched. It is designed for a broad range of Class A,

small-signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 0 to 6000 MHz such as Cellular,

PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general

small-signal RF.

0-6000 MHz, 15 dB

17 dBm

Features

InGaP HBT

• Frequency: 0 to 6000 MHz

• P1dB: 17 dBm @ 900 MHz

• Small-Signal Gain: 15 dB @ 900 MHz

• Third Order Output Intercept Point: 31 dBm @ 900 MHz

• Single 5 Volt Supply

• Internally Matched to 50 Ohms

• Low Cost SOT-89 Surface Mount Package

• Pb-Free and RoHS Compliant

CASE 1514-01, STYLE 1

SOT-89

• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

PLASTIC

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Characteristic

Symbol 900 2140 3500 Unit

MHz MHz

MHz

(2)

Supply Voltage

300

Small-Signal Gain

(S21)

-15

-25

-17

-25

16.5

(2)

Supply Current

RF Input Power

dBm

°C

Input Return Loss

(S11)

IRL

ORL

P1db

IP3

-22

-15

Storage Temperature Range

stg

-65 to +150

150

(3)

Junction Temperature

°C

Output Return Loss

(S22)

2. Continuous voltage and current applied to device.

3. For reliable operation, the junction temperature should not

Power Output @1dB

Compression

15.5 dBm

exceed 150°C.

Third Order Output

Intercept Point

dBm

1. V = 5 Vdc, T = 25°C, 50 ohm system

Table 3. Thermal Characteristics (V = 5 Vdc, I = 54 mA, T = 25°C)

(4)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MMG3010NT1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

中文翻译

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与MMG3010NT1相关器件

型号	品牌	获取价格	描述	数据表
MMG3010NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor (InGaP HBT)
MMG3011NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor (InGaP HBT)
MMG3011NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor
MMG3012N	NXP	获取价格	InGaP HBT GPA, 0-6000 MHz, 19 dB, 18.5 dBm
MMG3012NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor
MMG3013NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3013NT1	NXP	获取价格	0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE
MMG3013NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)

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