Datasheet > MMG300WB120B6TC

MMG300WB120B6TC

更新时间： 2024-11-19 17:15:55

品牌	Logo	应用领域
宏微 - MACMIC		双极性晶体管
页数	文件大小	规格书
6页	234K
描述
IGBT 模块

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMG300WB120B6TC 数据手册

MMG300WB120B6TC

1200V 300A IGBT Module

January 2021

Version 02

RoHS Compliant

PRODUCT FEATURES

□ IGBT CHIP(Trench+Field Stop technology)

□ Low saturation voltage and positive temperature coefficient

□ Fast switching and short tail current

□ Free wheeling diodes with fast and soft reverse recovery

□ Temperature sense included

APPLICATIONS

□ AC motor control

□ Motion/servo control

□ Inverter and power supplies

□ Photovoltaic/Fuel cell

IGBT-inverter

ABSOLUTE MAXIMUM RATINGS(T _C=25°C unless otherwise specified)

Symbol

V_CES

Parameter/Test Conditions

Values

Unit

T_J=25℃

Collector Emitter Voltage

Gate Emitter Voltage

1200

±20

V_GES

T_C=25℃, T_Jmax=175℃

455

I_C

DC Collector Current

T_C=100℃, T_Jmax=175℃

tp=1ms

300

I_CM

P_tot

Repetitive Peak Collector Current

Power Dissipation Per IGBT

600

T_C=25℃, T_Jmax=175℃

1596

Diode-inverter

ABSOLUTE MAXIMUM RATINGS (T _C=25°C unless otherwise specified)

Symbol

V_RRM

Parameter/Test Conditions

Values

1200

Unit

T_J=25℃

Repetitive Reverse Voltage

Average Forward Current

I_F(AV)

I_FRM

I²t

300

600

Repetitive Peak Forward Current

tp=1ms

A²S

T_J=150℃, t=10ms, V_R=0V

19000

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

12 3 4 5 6

中文翻译

下载PDF

与MMG300WB120B6TC相关器件

型号	品牌	获取价格	描述	数据表
MMG300WB170B	MACMIC	获取价格	IGBT 模块
MMG3010NT1	NXP	获取价格	0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, 4.5 X 2.5 MM, 1.5 MM HEIGHT,
MMG3010NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor (InGaP HBT)
MMG3010NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor (InGaP HBT)
MMG3011NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor (InGaP HBT)
MMG3011NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor
MMG3012N	NXP	获取价格	InGaP HBT GPA, 0-6000 MHz, 19 dB, 18.5 dBm
MMG3012NT1	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_08	FREESCALE	获取价格	Heterojunction Bipolar Transistor Technology (InGaP HBT)
MMG3012NT1_12	FREESCALE	获取价格	Heterojunction Bipolar Transistor