Datasheet > MMDF1300

MMDF1300

更新时间： 2024-11-17 22:30:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	47K
描述
Power MOSFET 3 Amps, 25 Volts

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中文翻译

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MMDF1300 数据手册

MMDF1300

Power MOSFET

3 Amps, 25 Volts

Complementary SO–8, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain–to–source diode has a very low reverse recovery time.

MiniMOSt devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in portable

and battery powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor controls

in mass storage products such as disk drives and tape drives. The

avalanche energy is specified to eliminate the guesswork in designs

where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

http://onsemi.com

3 AMPERES

25 VOLTS

= 100 mW (N–Channel)

= 210 mW (P–Channel)

DS(on)

N–Channel

P–Channel

• Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive – Can be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package – Saves Board Space

• Diode Exhibits High Speed, with Soft Recovery

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Rating

Drain–to–Source Voltage

Gate–to–Source Voltage

Symbol Value

Unit

Vdc

Adc

DSS

± 20

Drain Current – Continuous

N–Channel

SO–8, Dual

CASE 751

STYLE 11

1300

LYWW

3.0

2.0

P–Channel

Drain Current – Pulsed

N–Channel

Apk

9.0

6.0

P–Channel

1300

= Device Code

= Location Code

= Year

Operating and Storage Temperature Range

T , T

J stg

–65 to

+150

°C

= Work Week

Total Power Dissipation @ T = 25°C

1.8

Watts

Single Pulse Drain–to–Source Avalanche

PIN ASSIGNMENT

Energy – Starting T = 25°C

= 20 Vdc, V

= 10 Vdc,

113

66.3

260

= 3.0 Apk, L = 25 mH, R = 25 W)

Source–1

Gate–1

Drain–1

Drain–2

Thermal Resistance – Junction–to–Ambient

(Note 1.)

°C/W

°C

θJA

Source–2

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 sec.

Gate–2

Drain–2

Top View

1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),

10 sec. max.

ORDERING INFORMATION

Device

MMDF1300R2

Package

Shipping

2500 Tape & Reel

SO–8

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 1

MMDF1300/D

12 3 4

中文翻译

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与MMDF1300相关器件

型号	品牌	获取价格	描述	数据表
MMDF1300R2	ONSEMI	获取价格	Power MOSFET 3 Amps, 25 Volts
MMDF1N05E	ONSEMI	获取价格	Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual
MMDF1N05E	MOTOROLA	获取价格	DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
MMDF1N05ER1	MOTOROLA	获取价格	Power Field-Effect Transistor, 1A I(D), 50V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-
MMDF1N05ER2	ONSEMI	获取价格	Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual
MMDF1N05ER2	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.5ohm, 2-Element, N-Channel, Silicon, Metal-
MMDF1N05ER2G	ONSEMI	获取价格	Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual
MMDF2C01HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
MMDF2C01HDR1	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.1ohm, 2-Element, N-Channel and P-Channel, S
MMDF2C01HDR2	ONSEMI	获取价格	5.2A, 20V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8

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