Datasheet > 晶体管 > 功率场效应晶体管> MMDF1N05ER2G

MMDF1N05ER2G

更新时间： 2024-11-18 03:35:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率场效应晶体管开关脉冲光电二极管 PC
页数	文件大小	规格书
5页	76K
描述
Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual

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技术参数
数据手册
替代型号

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MMDF1N05ER2G 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
零件包装代码：	SOT	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.41	Samacsys Confidence：	3
Samacsys Status：	Released	Samacsys PartID：	225796
Samacsys Pin Count：	8	Samacsys Part Category：	Integrated Circuit
Samacsys Package Category：	Small Outline Packages	Samacsys Footprint Name：	SOIC-8 NB CAST 751-07
Samacsys Released Date：	2015-08-13 09:14:29	Is Samacsys：	N
其他特性：	LOGIC LEVEL COMPATIBLE	雪崩能效等级（Eas）：	300 mJ
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	最小漏源击穿电压：	50 V
最大漏极电流 (Abs) (ID)：	2 A	最大漏极电流 (ID)：	2 A
最大漏源导通电阻：	0.3 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	2
端子数量：	8	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2 W
最大脉冲漏极电流 (IDM)：	10 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

MMDF1N05ER2G 数据手册

MMDF1N05E

Power MOSFET

1 Amp, 50 Volts

N−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

http://onsemi.com

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOSt

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

1 AMPERE, 50 VOLTS

R_DS(on)= 300 mW

N−Channel

Features

MARKING

DIAGRAM

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed

SO−8

CASE 751

STYLE 11

F1N05

AYWWG

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• I

Specified at Elevated Temperature

DSS

F1N05 = Device Code

• Pb−Free Package is Available

= Assembly Location

= Year

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

= Work Week

= Pb−Free Package

Rating

Symbol

Value

Unit

(Note: Microdot may be in either location)

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

PIN ASSIGNMENT

Drain Current − Continuous

Drain Current − Pulsed

2.0

Source−1

Gate−1

Drain−1

Drain−2

Single Pulse Drain−to−Source Avalanche

300

Energy − Starting T = 25°C

Source−2

(V = 25 V, V = 10 V, I = 2 Apk)

Gate−2

Drain−2

Operating and Storage Temperature Range

T , T

−55 to 150

2.0

°C

stg

Top View

Total Power Dissipation @ T = 25°C

Thermal Resistance, Junction−to−Ambient

(Note 1)

62.5

°C/W

ORDERING INFORMATION

†

Device

Package

Shipping

Maximum Temperature for Soldering,

Time in Solder Bath

260

°C

Sec

MMDF1N05ER2

SO−8

2,500/Tape & Reel

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MMDF1N05ER2G

SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

one die operating, 10 sec. max.

Publication Order Number:

February, 2006 − Rev. 8

MMDF1N05E/D

12 3 4 5

中文翻译

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MMDF1N05ER2G 替代型号

型号	品牌	替代类型	描述	数据表
NDS9945	ONSEMI	类似代替	双N沟道增强模式场效应晶体管
MMDF1N05ER2	ONSEMI	类似代替	Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual
IRF7103PBF	INFINEON	功能相似	HEXFET Power MOSFET

与MMDF1N05ER2G相关器件

型号	品牌	获取价格	描述	数据表
MMDF2C01HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
MMDF2C01HDR1	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.1ohm, 2-Element, N-Channel and P-Channel, S
MMDF2C01HDR2	ONSEMI	获取价格	5.2A, 20V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
MMDF2C01HDR2	MOTOROLA	获取价格	5.2A, 20V, 0.055ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
MMDF2C02E	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
MMDF2C02ER2	MOTOROLA	获取价格	2A, 20V, 0.2ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
MMDF2C02HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS
MMDF2C02HDR2	MOTOROLA	获取价格	Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 2-Element, N-Channel and P-Channel
MMDF2C03HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
MMDF2C03HD	ONSEMI	获取价格	Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual

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