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MMDF1N05E

更新时间： 2024-11-17 22:30:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
6页 172K
描述
DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

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中文翻译

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MMDF1N05E 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：unknown
HTS代码：8541.29.00.95风险等级：5.36
其他特性：AVALANCHE ENERGY RATED; LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：300 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：50 V
最大漏极电流 (Abs) (ID)：1.5 A最大漏极电流 (ID)：2 A
最大漏源导通电阻：0.5 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.5 W最大脉冲漏极电流 (IDM)：10 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MMDF1N05E 数据手册

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Order this document  
by MMDF1N05E/D  
SEMICONDUCTOR TECHNICAL DATA  
Medium Power Surface Mount Products  
MiniMOS devices are an advanced series of power MOSFETs  
which utilize Motorola’s TMOS process. These miniature surface  
DUAL TMOS MOSFET  
50 VOLTS  
mount MOSFETs feature ultra low R  
and true logic level  
DS(on)  
performance. They are capable of withstanding high energy in the  
avalanche and commutation modes and the drain–to–source diode  
has a low reverse recovery time. MiniMOS devices are designed  
for use in low voltage, high speed switching applications where  
power efficiency is important. Typical applications are dc–dc  
converters, and power management in portable and battery  
powered products such as computers, printers, cellular and  
cordless phones. They can also be used for low voltage motor  
controls in mass storage products such as disk drives and tape  
drives. The avalanche energy is specified to eliminate the  
guesswork in designs where inductive loads are switched and offer  
additional safety margin against unexpected voltage transients.  
1.5 AMPERE  
R
= 0.30 OHM  
DS(on)  
D
G
CASE 751–05, Style 11  
SO–8  
S
•
•
•
•
•
•
•
•
Ultra Low R Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Logic Level Gate Drive — Can Be Driven by Logic ICs  
Miniature SO–8 Surface Mount Package — Saves Board Space  
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed  
1
2
3
4
8
7
6
5
Drain–1  
Drain–1  
Drain–2  
Drain–2  
Source–1  
Gate–1  
Avalanche Energy Specified  
Mounting Information for SO–8 Package Provided  
Source–2  
Gate–2  
I
Specified at Elevated Temperature  
DSS  
Top View  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain–to–Source Voltage  
Symbol  
Value  
Unit  
Volts  
Volts  
Amps  
V
V
50  
DS  
Gate–to–Source Voltage — Continuous  
±20  
GS  
Drain Current — Continuous  
Drain Current — Pulsed  
I
D
2.0  
10  
I
DM  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
300  
mJ  
J
(V  
DD  
= 25 V, V = 10 V, I = 2 Apk)  
GS L  
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
2.0  
°C  
J
Total Power Dissipation @ T = 25°C  
P
D
Watts  
° C/W  
A
(1)  
Thermal Resistance – Junction to Ambient  
R
62.5  
θJA  
Maximum Temperature for Soldering,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
DEVICE MARKING  
F1N05  
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
Quantity  
MMDF1N05ER2  
13″  
12 mm embossed tape  
2500  
MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company  
REV 5  
Motorola, Inc. 1996  
123456

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