Datasheet > MMDF1N05E

MMDF1N05E

更新时间： 2024-10-02 03:35:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	76K
描述
Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MMDF1N05E 数据手册

MMDF1N05E

Power MOSFET

1 Amp, 50 Volts

N−Channel SO−8, Dual

These miniature surface mount MOSFETs feature ultra low R

DS(on)

http://onsemi.com

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain−to−source diode has a low reverse recovery time. MiniMOSt

devices are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applications

are dc−dc converters, and power management in portable and battery

powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass

storage products such as disk drives and tape drives. The avalanche

energy is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

1 AMPERE, 50 VOLTS

R_DS(on)= 300 mW

N−Channel

Features

MARKING

DIAGRAM

• Ultra Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Logic Level Gate Drive − Can Be Driven by Logic ICs

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed

SO−8

CASE 751

STYLE 11

F1N05

AYWWG

• Avalanche Energy Specified

• Mounting Information for SO−8 Package Provided

• I

Specified at Elevated Temperature

DSS

F1N05 = Device Code

• Pb−Free Package is Available

= Assembly Location

= Year

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

= Work Week

= Pb−Free Package

Rating

Symbol

Value

Unit

(Note: Microdot may be in either location)

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

PIN ASSIGNMENT

Drain Current − Continuous

Drain Current − Pulsed

2.0

Source−1

Gate−1

Drain−1

Drain−2

Single Pulse Drain−to−Source Avalanche

300

Energy − Starting T = 25°C

Source−2

(V = 25 V, V = 10 V, I = 2 Apk)

Gate−2

Drain−2

Operating and Storage Temperature Range

T , T

−55 to 150

2.0

°C

stg

Top View

Total Power Dissipation @ T = 25°C

Thermal Resistance, Junction−to−Ambient

(Note 1)

62.5

°C/W

ORDERING INFORMATION

†

Device

Package

Shipping

Maximum Temperature for Soldering,

Time in Solder Bath

260

°C

Sec

MMDF1N05ER2

SO−8

2,500/Tape & Reel

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MMDF1N05ER2G

SO−8

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with

one die operating, 10 sec. max.

Publication Order Number:

February, 2006 − Rev. 8

MMDF1N05E/D

12 3 4 5

中文翻译

下载PDF

MMDF1N05E 替代型号

型号	品牌	替代类型	描述	数据表
NDS9945	ONSEMI	功能相似	双N沟道增强模式场效应晶体管
MMDF1N05ER2	ONSEMI	功能相似	Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual

与MMDF1N05E相关器件

型号	品牌	获取价格	描述	数据表
MMDF1N05ER1	MOTOROLA	获取价格	Power Field-Effect Transistor, 1A I(D), 50V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-
MMDF1N05ER2	ONSEMI	获取价格	Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual
MMDF1N05ER2	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 50V, 0.5ohm, 2-Element, N-Channel, Silicon, Metal-
MMDF1N05ER2G	ONSEMI	获取价格	Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual
MMDF2C01HD	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
MMDF2C01HDR1	MOTOROLA	获取价格	Power Field-Effect Transistor, 2A I(D), 12V, 0.1ohm, 2-Element, N-Channel and P-Channel, S
MMDF2C01HDR2	ONSEMI	获取价格	5.2A, 20V, 0.045ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
MMDF2C01HDR2	MOTOROLA	获取价格	5.2A, 20V, 0.055ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8
MMDF2C02E	MOTOROLA	获取价格	COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
MMDF2C02ER2	MOTOROLA	获取价格	2A, 20V, 0.2ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8

与MMDF1N05E相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

MMDF1N05E

MMDF1N05E 数据手册

MMDF1N05E 替代型号

与MMDF1N05E相关器件

与MMDF1N05E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMDF1N05E

MMDF1N05E 数据手册

MMDF1N05E 替代型号

与MMDF1N05E相关器件

与MMDF1N05E相关文章

您还可以找

您在本页遇到什么问题？