Datasheet > MMBT5401LT1

MMBT5401LT1

更新时间： 2024-11-05 11:59:31

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管光电二极管高压
页数	文件大小	规格书
5页	330K
描述
High Voltage Transistor

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MMBT5401LT1 数据手册

WILLAS

MMBT5401LT1

High Voltage Transistor

FEATURE

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

MMBT5401LT1

3000/Tape&Reel

SOT– 23

MAXIMUM RATINGS

Rating

Symbol

Value

– 150

– 160

– 5.0

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

COLLECTOR

Vdc

EBO

Collector Current — Continuous

I_C

– 500

mAdc

BASE

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

EMITTER

Total Device Dissipation FR- 5 Board (1)

T _A=25 °C

P_D

225

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

556

300

°C/W

θJA

Total Device Dissipation

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

T _J, T_stg

–55to+150

DEVICE MARKING

MMBT5401LT1=2L

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I _C= –1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V_(BR)EBO

I_CES

Vdc

– 150

– 160

-5.0

—

Collector–Base Breakdown Voltage

(I _C= –100 µAdc, I _E= 0)

Emitter-BAse Breakdown Voltage

(I _E= –10µAdc,I _C=0)

Collector Cutoff Current

(V _CB= –120 Vdc, I_E= 0)

—

– 50

nAdc

(V _CB= –120 Vdc, I_E= 0, T _A=100 °C)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

µAdc

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2012-11

WILLAS ELECTRONIC CORP.

12 3 4 5

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