Datasheet > MMBT5401M3T5G

MMBT5401M3T5G

更新时间： 2023-09-03 20:26:42

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
7页	218K
描述
150 V，60 mA，低饱和压，PNP 晶体管，SOT-723

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MMBT5401M3T5G 数据手册

MMBT5401M3

High Voltage Transistor

PNP Silicon

The MMBT5401M3 device is a spin−off of our popular SOT−23

three−leaded device. It is designed for general purpose amplifier

applications and is housed in the SOT−723 surface mount package.

This device is ideal for low−power surface mount applications where

board space is at a premium.

www.onsemi.com

Features

SOT−723

CASE 631AA

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

COLLECTOR

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

BASE

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

−150

−160

−5.0

−60

Unit

Vdc

CEO

CBO

EBO

EMITTER

Vdc

MARKING DIAGRAM

Collector Current − Continuous

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

RJ M

THERMAL CHARACTERISTICS

= Specific Device Code

= Date Code

Characteristic

Symbol

Max

Unit

Total Device Dissipation

130

FR−5 Board (Note 1)

T = 25°C

Derate Above 25°C

1.0

mW/°C

°C/W

ORDERING INFORMATION

Thermal Resistance,

Junction−to−Ambient (Note 1)

470

†

Device

Shipping

Package

MMBT5401M3T5G

8000 / Tape &

Reel

SOT−723

(Pb−Free)

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

1. FR−5 @ 100 mm , 1.0 oz. copper traces, still air.

NSVMMBT5401M3T5G

8000 / Tape &

Reel

SOT−723

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

June, 2019 − Rev. 1

MMBT5401M3/D

12 3 4 5 6 7

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