Datasheet > MMBT5518DE

MMBT5518DE

更新时间： 2024-11-25 14:54:55

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	1171K
描述
小信号晶体管

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MMBT5518DE 数据手册

MMBT5518DE

Complementary NPN / PNP Silicon Epitaxial Planar Transistors

Features

• Low collector capacitance

• Low VCEsat

TR2

TR1

• High current capabilities

TR1: 1. Emitter 2. Base 6. Collector

TR2: 4. Emitter 5. Base 3. Collector

SOT-563 Plastic package

Applications

• Heavy duty battery powered equipment (automotive,

telecom and audio-video) such as motor and lamp drivers

• VCEsat critical applications such as latest low supply voltage IC applications

• All battery driven equipment, to save battery power.

Maximum Ratings (T_a= 25 ):TR1&TR2

Value

Parameter

Symbol

Unit

NPN

PNP

Collector Base Voltage

V_CBO

V_CEO

-15

-12

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_EBO

I_C

0.5

-6

-0.5

-1

Peak Collector Current

I_CM

Maximum Ratings (T_a= 25 ):TR1&TR2

Parameter

Symbol

Value

200

Unit

Total Power Dissipation

P_tot

Thermal Resistance Junction to Ambient ¹⁾

Junction Temperature

625

R_θJA

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

1 / 5

Dated：06/04/2022 Rev：01

12 3 4 5

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