Datasheet > MMBT5541DW

MMBT5541DW

更新时间： 2024-09-27 14:54:55

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
6页	320K
描述
小信号晶体管

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数据手册

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MMBT5541DW 数据手册

MMBT5541DW

Complementary NPN / PNP Silicon Epitaxial Planar Transistor

Features

• High DC Current Gain

• Low Collector to Emitter Saturation Voltage

TR2

TR1

TR1: 1. Emitter 2. Base 6. Collector

TR2: 4. Emitter 5. Base 3. Collector

SOT-363 Plastic package

Applications

• General purpose amplifier and switching

Absolute Maximum Ratings (T_a= 25℃ Unless otherwise specified) (TR1)

Parameter

Collector Base Voltage

Symbol

V_CBO

Value

Unit

180

160

Collector Emitter Voltage

Emitter Base Voltage

V_CEO

V_EBO

Collector Current

I_C

600

Absolute Maximum Ratings (T_a= 25℃ Unless otherwise specified) (TR2)

Parameter

Collector Base Voltage

Symbol

-V_CBO

-V_CEO

-V_EBO

Value

180

160

Unit

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-I_C

600

Thermal Characteristics (TR1 and TR2)

Parameter

Symbol

P_tot

Value

300

Unit

℃/W

℃

Total Power Dissipation

Thermal Resistance from Junction to Ambient ¹⁾

R_θJA

T_j

417

Junction Temperature

150

Storage Temperature Range

T_stg

- 55 to + 150

℃

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 6

Dated: 14/03/2023 Rev: 02

12 3 4 5 6

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