Datasheet > MMBT5550

MMBT5550

更新时间： 2024-11-23 22:54:43

品牌	Logo	应用领域
智威 - ZOWIE		晶体晶体管高压 IOT
页数	文件大小	规格书
4页	87K
描述
HIGH VOLTAGE TRANSISTOR NPN SILICON

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数据手册

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MMBT5550 数据手册

Zowie Technology Corporation

High Voltage Transistor

NPN Silicon

COLLECTOR

BASE

MMBT5550

EMITTER

SOT-23

MAXIMUM RATINGS

Value

Symbol

VCEO

VCBO

VEBO

Unit

Vdc

Rating

Collector-Emitter Voltage

Collector-Base Voltage

140

160

6.0

Vdc

Emitter-Base Voltage

Vdc

Collector Current-Continuous

600

mAdc

THERMAL CHARACTERISTICS

Max.

Symbol

Unit

Characteristic

Total Device Dissipation FR-5 Board⁽¹⁾TA=25^oC

225

1.8

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

556

^oC / W

Total Device Dissipation Alumina Substrate,⁽²⁾TA=25^oC

300

2.4

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

417

^oC / W

^oC

TJ,TSTG

-55 to +150

DEVICE MARKING

MMBT5550=M1F

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

Symbol

Max.

Min.

140

Unit

Vdc

Characteristic

OFF CHARACTERISTICS

(3)

Collector-Emitter Breakdowe Voltage

( IC=1.0mAdc, IB=0 )

V(BR)CEO

Collector-Base Breakdowe Voltage

( IC=100 uAdc, IE=0 )

V(BR)CBO

V(BR)EBO

160

6.0

Vdc

Emitter-Base Breakdowe Voltage

( IE=10 uAdc, IC=0 )

Base Cutoff Current

( VCE=100 Vdc, IE=0 )

100

nAdc

uAdc

ICBO

IEBO

( VCE=100 Vdc, IE=0, TA = 100^oC )

Collector Cutoff Current

( VEB=4.0 Vdc, IC=0 )

nAdc

(1) FR-5=1.0 0.75 0.062in.

(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.

(3) Pulse Test : Pulse Width = 300 uS, Duty Cycle = 2.0%.

REV. : 0

Zowie Technology Corporation

12 3 4

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