MMBT5401W
PNP Silicon
Plastic-Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURE
A
L
ꢀ
ꢀ
ꢀ
Ideal for Medium Power Amplification and Switching
Also Available in Lead Free Version
Complementary to MMBT5551W
3
3
Top View
C B
1
1
2
2
K
F
E
Collector
3
D
H
J
G
MARKING: K4M
1
Millimeter
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
REF.
REF.
Base
Min.
Max.
2.20
2.45
1.35
1.10
1.40
0.40
A
B
C
D
E
F
1.80
1.80
1.15
0.80
1.20
0.20
G
H
J
K
L
2
0.08
-
0.25
-
Emitter
0.650 TYP.
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
SYMBOL
VCBO
RATINGS
UNIT
V
-160
Collector to Emitter Voltage
VCEO
-150
V
Emitter to Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Opterating & Storage Temperature
VEBO
IC
PC
RθJA
-5
-200
200
V
mA
mW
°C/W
°C
625
150, -55 ~ 150
TJ, TSTG
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
-160
-150
-5
MAX
UNIT
V
V
V
nA
nA
TEST CONDITION
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=-100µA, IE=0
IC = -1mA, IB = 0
IE=-10µA, IC=0
VCB=-120V, IE=0
VEB=-3V, IC=0
-50
-50
Emitter Cutoff Current
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
50
60
50
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
DC Current Gain
240
-0.2
-0.5
-1
V
V
V
V
MHz
pF
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
-1
Transition Frequency
Collector Output Capacitance
100
Cob
6
8
V
CE=-5V, IC=-0.2mA, f=1KHz,
Noise Figure
NF
dB
RS=10Ω
01-Dec-2009 Rev. A
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