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MMBT5550G

更新时间: 2024-02-20 02:31:02
品牌 Logo 应用领域
智威 - ZOWIE 晶体晶体管
页数 文件大小 规格书
4页 195K
描述
High Voltage Transistors

MMBT5550G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.64Is Samacsys:N
最大集电极电流 (IC):0.6 A配置:Single
最小直流电流增益 (hFE):60JESD-609代码:e0
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.225 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMBT5550G 数据手册

 浏览型号MMBT5550G的Datasheet PDF文件第2页浏览型号MMBT5550G的Datasheet PDF文件第3页浏览型号MMBT5550G的Datasheet PDF文件第4页 
Zowie Technology Corporation  
High Voltage Transistors  
Lead free product  
FEATURE  
We declare that the material of product  
compliance with RoHS requirements.  
ƽ
3
COLLECTOR  
3
MMBT5550G  
1
BASE  
1
MMBT5551G  
2
2
SOT-23  
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
140  
160  
6.0  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
V
V
CEO  
Vdc  
Vdc  
Vdc  
CBO  
EBO  
Collector Current — Continuous  
I C  
600  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
= 25°C  
P
D
225  
mW  
TA  
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
θJA  
556  
P
D
300  
mW  
Alumina Substrate, (2) T  
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
θJA  
417  
T
J
, Tstg  
–55 to +150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
V (BR)CEO  
V (BR)CBO  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage(3)  
(I C = 1.0 mAdc, I B = 0)  
MMBT5550G  
MMBT5551G  
Vdc  
140  
160  
Collector–Base Breakdown Voltage  
MMBT5550G  
MMBT5551G  
160  
(I C = 100 µAdc, I E = 0)  
Vdc  
Vdc  
180  
Emitter–Base Breakdown Voltage  
(I E = 10 µAdc, I C = 0)  
V (BR)EBO  
I CBO  
6.0  
Collector Cutoff Current  
nAdc  
100  
50  
MMBT5550G  
MMBT5551G  
MMBT5550G  
MMBT5551G  
( V CB = 100Vdc, I E = 0)  
( V CB = 120Vdc, I E = 0)  
µAdc  
100  
( V CB = 100Vdc, I E = 0, T A=100 °C)  
( V CB = 120Vdc, I E = 0, T A=100 °C)  
Emitter Cutoff Current  
50  
I EBO  
50  
nAdc  
( V BE = 4.0Vdc, I C= 0)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.  
REV. 0  
Zowie Technology Corporation  

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