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MMBT5401Q PDF预览

MMBT5401Q

更新时间: 2024-09-27 13:45:39
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
2页 49K
描述
PNP, 150V, 0.6A, SOT23

MMBT5401Q 数据手册

 浏览型号MMBT5401Q的Datasheet PDF文件第2页 
MMBT5401  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Complementary NPN Type Available  
(MMBT5551)  
Ideal for Medium Power Amplification and  
Switching  
SOT-23  
A
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
C
·
B
C
B
TOP VIEW  
B
E
C
D
G
Mechanical Data  
·
E
D
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking (See Page 2): K4M  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approx.)  
H
E
·
K
G
H
M
J
·
·
L
J
C
K
·
·
·
·
L
M
E
B
a
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
MMBT5401  
-160  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-150  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
-200  
mA  
mW  
°C/W  
°C  
Pd  
300  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
Tj, TSTG  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IC = -100mA, IE = 0  
IC = -1.0mA, IB = 0  
IE = -10mA, IC = 0  
-160  
-150  
-5.0  
¾
¾
¾
V
V
V
V
V
CB = -120V, IE = 0  
nA  
ICBO  
IEBO  
Collector Cutoff Current  
¾
¾
-50  
-50  
CB = -120V, IE = 0, TA = 100°C  
mA  
VEB = -3.0V, IC = 0  
Emitter Cutoff Current  
nA  
ON CHARACTERISTICS (Note 2)  
IC = -1.0mA, VCE = -5.0V  
50  
60  
50  
¾
240  
¾
IC  
IC  
=
=
-10mA, VCE = -5.0V  
-50mA, VCE = -5.0V  
hFE  
DC Current Gain  
¾
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-0.2  
-0.5  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
¾
¾
V
V
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-1.0  
SMALL SIGNAL CHARACTERISTICS  
VCB = -10V, f = 1.0MHz, IE = 0  
Cobo  
hfe  
Output Capacitance  
¾
6.0  
pF  
VCE = -10V, IC = -1.0mA,  
f = 1.0kHz  
Small Signal Current Gain  
Current Gain-Bandwidth Product  
Noise Figure  
40  
200  
¾
VCE = -10V, IC = -10mA,  
f = 100MHz  
fT  
100  
300  
8.0  
MHz  
dB  
VCE = -5.0V, IC = -200mA,  
RS = 10W, f = 1.0kHz  
NF  
¾
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30057 Rev. 3 - 2  
1 of 2  
MMBT5401  
www.diodes.com  

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