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MMBT2484LT3G PDF预览

MMBT2484LT3G

更新时间: 2024-09-14 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
5页 188K
描述
NPN Bipolar Transistor

MMBT2484LT3G 数据手册

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MMBT2484LT1G  
Low Noise Transistor  
NPN Silicon  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
BASE  
CollectorEmitter Voltage  
V
60  
Vdc  
CEO  
CBO  
CollectorBase Voltage  
EmitterBase Voltage  
V
60  
6.0  
100  
Vdc  
Vdc  
2
EMITTER  
V
EBO  
Collector Current Continuous  
I
C
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
3
Symbol  
Max  
Unit  
1
Total Device Dissipation FR5 Board,  
P
D
2
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
SOT23 (TO236)  
CASE 318  
Thermal Resistance, JunctiontoAmbient  
R
q
JA  
556  
°C/W  
STYLE 6  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
MARKING DIAGRAM  
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
55 to +150  
stg  
1U M G  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 x 0.75 x 0.062 in.  
G
1
1U = Device Code  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
M
= Date Code*  
G
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT2484LT1G SOT23  
(PbFree)  
3,000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 Rev. 4  
MMBT2484LT1/D  
 

MMBT2484LT3G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2484 ONSEMI

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MMBT2484LT1G ONSEMI

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Low Noise Transistor
MMBT2484LT1 ONSEMI

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Low Noise Transistor(NPN Silicon)

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